2009
DOI: 10.1143/jjap.48.095005
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Effects of Flare on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists

Abstract: We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows t… Show more

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Cited by 9 publications
(7 citation statements)
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“…Except for the quencher concentration, the flare intensity does not affect the results under the assumption used in this study. 35) The absorption coefficient and acid generator concentration were set to be typical values for chemically amplified EUV resists (3.8 mm À1 and 10 wt %, respectively). 36) The contribution of the direct electronic excitation of acid generators to acid generation was incorporated using the f excitation factor (1:4 Â 10 À2 dm 3 mol À1 eV À1 ).…”
Section: Iðx; Y; Zþmentioning
confidence: 99%
“…Except for the quencher concentration, the flare intensity does not affect the results under the assumption used in this study. 35) The absorption coefficient and acid generator concentration were set to be typical values for chemically amplified EUV resists (3.8 mm À1 and 10 wt %, respectively). 36) The contribution of the direct electronic excitation of acid generators to acid generation was incorporated using the f excitation factor (1:4 Â 10 À2 dm 3 mol À1 eV À1 ).…”
Section: Iðx; Y; Zþmentioning
confidence: 99%
“…The flare was assumed to be 10%, although the flare intensity does not affect the results under the assumption used in this study except for the quencher concentration. 32) The absorption coefficient and acid generator concentration were set to be typical values for chemically amplified EUV resists (3.8 m À1 and 10 wt %), respectively. In chemically amplified resists for ionizing radiation, acid generators are mainly decomposed through dissociative electron attachment.…”
Section: Iðx; Y; Zþmentioning
confidence: 99%
“…The resist pattern formation is complicated because many factors contribute to the pattern formation. For better understanding of the fundamental aspects of pattern formation mechanisms, lithographic factors such as neutralization mechanism, 18) flare, 19) quencher, 20) half pitch, 21) and exposure dose 22) have been investigated neglecting the image quality of exposure systems. However, the aerial image contrast depends on the exposure tool and mask and has a great impact on the latent image quality.…”
Section: Introductionmentioning
confidence: 99%