Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

Kwon, Sung-Kyu; Kwon, Hyuk-Min; Han, Inwoo; Jang, Jae-Hyung; Oh, Sang‐Keun; Song, Hyun Keun; Park, Byoung-Seok; Chung, Yi-Sun; Lee, Jung Hwan; Kim, Sibum; Lee, Ga‐Won; Lee, Hi‐Deok

doi:10.1109/jeds.2018.2855432

Cited by 14 publications

(3 citation statements)

References 20 publications

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“…To reduce the density of the trap state, a fluorine implantation technology was commonly used in silicon wafer. Since the fluorine has a strong electronegativity, it breaks the weak deformed silicon bonds and forms the strong Si-F bonds [10][11][12]. These fluorine bonds were known to be very effective in reducing the trap state density and passivating the unsaturated bonds [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Since the fluorine has a strong electronegativity, it breaks the weak deformed silicon bonds and forms the strong Si-F bonds [10][11][12]. These fluorine bonds were known to be very effective in reducing the trap state density and passivating the unsaturated bonds [10][11][12]. Ha et al [13] reported that the dark current properties could be improved as a result of selective application of the fluorine implantation to the NMOS transistor of a CMOS image sensor.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

Chai

Choa

2021

Crystals

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Recently, the demand of a high resolution complementary metal-oxide semiconductor (CMOS) image sensor is dramatically increasing. As the pixel size reduces to submicron, however, the quality of the sensor image decreases. In particular, the dark current can act as a large noise source resulting in reduction of the quality of the sensor image. Fluorine ion implantation was commonly used to improve the dark current by reducing the trap state density. However, the implanted fluorine diffused to the outside of the silicon surface and disappeared after annealing process. In this paper, we analyzed the effects of carbon implantation on the fluorine diffusion and the dark current characteristics of the CMOS image sensor. As the carbon was implanted with dose of 5.0 × 1014 and 1 × 1015 ions/cm2 in N+ area of FD region, the retained dose of fluorine was improved by more than 131% and 242%, respectively than no carbon implantation indicating that the higher concentration of the carbon implantation, the higher the retained dose of fluorine after annealing. As the retained fluorine concentration increased, the minority carriers of electrons or holes decreased by more Si-F bond formation, resulting in increasing the sheet resistance. When carbon was implanted with 1.0 × 1015 ions/cm2, the defective pixel, dark current, transient noise, and flicker were much improved by 25%, 9.4%, 1%, and 28%, respectively compared to no carbon implantation. Therefore, the diffusion of fluorine after annealing could be improved by the carbon implantation leading to improvement of the dark current characteristics.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

Chai

Choa

2021

Crystals

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“…Therefore, these GB defects are more remarkably suppressed by cooperating F, which is the driving force to improve the device performances of poly-Si transistor. 12) Another effective way to minimize the GB defects is to shrink the dimension of poly-Si channel, which can significantly reduce the total number of GB defects and improves the electrical performances of the poly-Si transistor. 4,13) Simultaneously, the adoption of a gate-allaround (GAA) nanowire (NW) as the channel structure of the poly-Si transistor has been extensively studied because the surrounding gate on the whole channel can effectively control the electrostatic potential of the channel, and the total number of GBs can be dramatically reduced due to the nano scale small-size volume.…”

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confidence: 99%

Superior subthreshold characteristics of gate-all-around p-type junctionless poly-Si nanowire transistor with ideal subthreshold slope

Ahn

Saraya

Kobayashi

et al. 2020

Jpn. J. Appl. Phys.

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Junctionless p-type polycrystalline silicon (poly-Si) nanowire (NW) transistor with ideal subthreshold slope (SS) is successfully demonstrated by a gate-all-around channel structure and improved fabrication processes with highly suppressed grain boundary defects in the poly-Si. The fabricated devices, whose NW width is 9.6 nm, exhibit nearly ideal SS of 60 mV dec−1 at room temperature. Furthermore, relatively high field effect mobility, small device-to-device SS variations and negligible temperature dependence are observed, indicating the device is promising for future three-dimensional integration.

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Unified Quantum and Reliability Model for Ultra-Thin Double-Gate MOSFETs

ElKashlan

Samy

Anis

et al. 2019

Silicon

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Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

Cited by 14 publications

References 20 publications

Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

Superior subthreshold characteristics of gate-all-around p-type junctionless poly-Si nanowire transistor with ideal subthreshold slope

Unified Quantum and Reliability Model for Ultra-Thin Double-Gate MOSFETs

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