Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

Laird, J.S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi N.; Johnston, A.H.; Itoh, Hisayoshi

doi:10.1109/tns.2006.886042

Cited by 14 publications

(5 citation statements)

References 34 publications

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“…Displacement damage caused by gamma rays, however, occurs indirectly due to Compton electrons (with a 1.2 MeV maximum energy), but only on a very small scale compared to protons (e.g., [29][30][31]). Si recoil energies can generate a maximum of one or two displaced atoms per scattered electron [32].…”

Section: Co Irradiationmentioning

confidence: 99%

Expected radiation damage of reverse-type APDs for the Astro-H mission

et al. 2012

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Scheduled for launch in 2014, Astro-H is the sixth Japanese X-ray astronomy satellite mission. More than 60 silicon avalanche photodiodes (Si-APDs; hereafter APDs) will be used to read out BGO scintillators, which are implemented to generate a veto signal to reduce background contamination for the hard X-ray imager (HXI) and a soft gamma-ray detector (SGD). To date, however, APDs have rarely been used in space experiments. Moreover, strict environmental tests are necessary to guarantee APD performance for missions expected to extend beyond five years. The radiation hardness of APDs, as for most semiconductors, is particularly crucial, since radiation in the space environment is severe. In this paper, we present the results of radiation tests conducted on reverse-type APDs (provided by Hamamatsu Photonics) irradiated by gamma rays ( 60 Co) and 150 MeV protons. We show that, even under the same 100 Gy dose, high energy protons can cause displacement (bulk) damage in the depletion region and possibly change the activation energy, whereas gamma-ray irradiation is less prone to cause damage, because ionization damage dominates only the surface region. We also present quantitative guidance on how to estimate APD noise deterioration over a range of temperatures and radiation doses. As a practical example, we discuss the expected degradation of the BGO energy threshold for the generation of veto signals, following several years of Astro-H operation in Low Earth Orbit (LEO), and directly compare it to experimental results obtained using a small BGO crystal.

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Section: Co Irradiationmentioning

confidence: 99%

Expected radiation damage of reverse-type APDs for the Astro-H mission

et al. 2012

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“…Mounting a PD for integrated charge measurements is much simpler due to relaxation of the aforementioned prerequisites regarding the BW of the external circuit and load. Recent work on pulsed laser injection in Si avalanche photodiodes found them to be ideal candidates for charge contrast [33], since the device gain is extremely sensitive to SC effects.…”

Section: Resultsmentioning

confidence: 99%

A novel feedback method for optimizing the focus of an ultrafast photon source using the transient photocurrent of a high-speed device

Laird¹,

Hirao²,

Onoda³

et al. 2006

Meas. Sci. Technol.

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A novel feedback method for focusing an ultrafast photon source is illustrated for the first time. The method relies on the pulse shape analysis (PSA) of the high-speed transient photocurrent (TP) measured as a function of relative distance between the objective lens and a photosensitive semiconductor device. Space-charge effects due to high-injection conditions result in a screened electron–hole pair plasma which exhibits an erosion time constant which depends on the density and ambipolar diffusivity of the plasma. Focusing the beam increases the average injection level thereby decreasing the ambipolar diffusivity and extending the transient photocurrent. A simple pulse shape analysis of the transient inside a feedback loop is used for optimizing the spot size. In theory, the method can be applied to any technique involving a photon source which delivers an ultrafast pulse which generates high-injection carrier levels when focused. Here, the method is outlined and demonstrated on a Si photodetector optimized for λ = 800 nm.

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“…Since this test is evaluating a short‐term effect with a high dose rate that minimizes the annealing, the result shows the worst case for the low dose rate environment in space. Furthermore, Laird et al [] tested a 30 μm reach‐through APD up to 10 Mrad and showed that there was no change found in the multiplication factor.…”

Section: Avalanche Photodiodesmentioning

confidence: 99%

“…Since this test is evaluating a short-term effect with a high dose rate that minimizes the annealing, the result shows the worst case for the low dose rate environment in space. Furthermore, Laird et al [2006] tested a 30 μm reach-through APD up to 10 Mrad and showed that there was no change found in the multiplication factor. Becker et al [2003] showed with ∼50 MeV protons that the increase of leakage current was basically due to the displacement damage in the drift region.…”

Section: Radiation Tolerancementioning

confidence: 99%

“…Although the proton damage contributes more significantly in the low dose range [ Kataoka et al , ], for a certain type of silicon APD, the gamma radiation damage may be important for the leakage current increase at >25 krad [ Becker et al , ]. These differences can be caused by the operational range of the bias voltages compared to the breakdown voltage [ Laird et al , ] especially for reach‐through devices.…”

Section: Avalanche Photodiodesmentioning

confidence: 99%

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Next‐generation solid‐state detectors for charged particle spectroscopy

et al. 2016

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The performance of silicon avalanche photodiodes (APDs) and single crystal chemical vapor deposit diamond detectors (DDs) is reviewed in comparison with conventional silicon‐based solid‐state detectors (SSDs) from the perspective of space plasma applications. Although the low‐energy threshold and the energy resolution are equivalent to SSDs, DDs offer a high radiation tolerance and very low leakage currents due to a wider band gap than silicon. In addition, DDs can operate at higher temperatures, are insensitive to light (>226 nm), and are capable of timing analysis due to the higher intrinsic carrier mobility. APDs also offer several advantageous features. Specifically, APDs have a lower energy threshold (<0.9 keV) and a higher energy resolution (<0.7 keV full width at half maximum at room temperature), along with a linear response due to a strong electric field causing signal amplifications within the detector. Therefore, APDs can be used to detect lower energy particles, covering a larger portion of the energy spectrum than conventional SSDs. Further, the strong internal electric field gives them a subnanosecond response time by the charge mobility saturation, allowing them to make precise timing measurements of ions. These novel detector techniques can be potentially applied to improve the measurements of suprathermal particles, whose energies lie between typical ranges of conventional sensors for low‐energy plasmas and energetic particles. Although the origin and evolution of the suprathermal particles are the key to understanding the acceleration and heating processes in space plasma, they are not well understood due to the technical difficulties of making the measurement.

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Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

Cited by 14 publications

References 34 publications

Expected radiation damage of reverse-type APDs for the Astro-H mission

Expected radiation damage of reverse-type APDs for the Astro-H mission

A novel feedback method for optimizing the focus of an ultrafast photon source using the transient photocurrent of a high-speed device

Next‐generation solid‐state detectors for charged particle spectroscopy

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