Effects of group-III elements on the growth kinetics of shape-engineered InAs/InAlGaAs quantum dots

Yang, Youngsin; Jo, Byounggu; Kim, Jaesu; Lee, Kwang Jae; Ko, Myoungkuk; Lee, Cheul-Ro; Oh, Dae Kon; Kim, Jong Su; Leem, Jae‐Young

doi:10.1016/j.tsf.2009.01.109

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…7(c), were 85 meV at 1.55 µm, and 35 meV at 1.5 µm, respectively, with the latter one among one of the best inhomogeneous broadening value obtained at room temperature on InAs/InP Qdots. The optical stability [43] and the effects of group III elements on the growth kinetics of AGQDs were also investigated via utilization of 1 ML InAs and GaAs layers instead of InGaAlAs layer during the growth of InAs Qdots on (100) InP substrate [44].…”

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…Although good device performances such as high differential gain, low threshold current density, and high thermal stability are expected due to the δ-like density of states of the QDs, device performance has not yet been sufficiently demonstrated because of the difficulties involved in fabricating nanometer-scale QDs of high quality and good uniformity [5][6][7]. In many studies, various * corresponding author; e-mail: jyleem@inje.ac.kr growth parameters such as growth temperature, growth rate, growth interruption (GRI) time, beam-equivalent pressure (BEP), and III/V ratio have been employed to optimize the QD size and density.…”

Section: Introductionmentioning

confidence: 99%

Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots

et al. 2010

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The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × 10 11 to 1.36 × 10 10 cm −2 . This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.

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“…Over the past several years, a three-dimensional quantum-confined structure, quantum dot (QD), has attracted considerable interest from both fundamental physics and potential device applications [1][2][3][4][5][6]. For example, a QD laser diode is expected to have high thermal stability, a low threshold current density, and a high gain due to the unique properties of QDs, atomic-like electronic states, and a delta-function-like density of states.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

Kim

Jeon

et al. 2010

Acta Phys. Pol. A

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Multi-stacked InAs QDs embedded in ten periods of GaAs/In0.1Ga0.9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0.1Ga0.9As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850• C. At annealing temperature of 600• C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.

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Effects of group-III elements on the growth kinetics of shape-engineered InAs/InAlGaAs quantum dots

Cited by 6 publications

References 16 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots

Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

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