Effects of Growth Conditions on Properties of ZnO Nanostructures Grown by Hydrothermal Method

Cho, Min-Young; Kim, Min-Su; Kim, Ghun-Sik; Choi, Hye‐Yeon; Jeon, Seung Hwan; Yim, Kwang-Gug; Lee, Dong-Yul; Kim, Jong-Su; Lee, Joo-In; Leem, Jae‐Young

doi:10.3740/mrsk.2010.20.5.262

Korean. J. Mater. Res.

2010

DOI: 10.3740/mrsk.2010.20.5.262

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Effects of Growth Conditions on Properties of ZnO Nanostructures Grown by Hydrothermal Method

Min-Young Cho¹,

Min-Su Kim²,

Ghun-Sik Kim³

et al.

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2011

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Cited by 2 publications

References 19 publications

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Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness

Heo¹,

Ryu²,

Lee³

2011

Korean. J. Mater. Res.

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In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at 700 o C for 10 minutes in N 2 in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at 700 o C for 30 minutes in N 2 . In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

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Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness

Heo¹,

Ryu²,

Lee³

2011

Korean. J. Mater. Res.

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Growth and UV Emission of Preferred Oriented ZnO Nanowires Using Hydrothermal Process

Kim¹,

Lim²,

Kim³

et al. 2011

Korean. J. Mater. Res.

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1-D ZnO nanowires have been attractive for their peculiar properties and easy growth at relatively low temperature. The length, diameter, and density of ZnO nanowires were determined by the several synthetic parameters, such as PEI concentration, growth time, temperature, and zinc salt concentration. The ZnO nanowires were grown on the <001> oriented seed layer using the hydrothermal process with zinc nitrate and HMTA (hexamethylenetetramine) and their structure and optical properties were characterized. The morphology, length and diameter of the nanowires were strongly affected by the relative and/ or absolute concentration of Zn 2+ and OH −1 and the hydrothermal temperature. When the concentrations of the zinc nitrate HMTA were the same as 0.015 M, the length and diameter of the nanowires were 1.97 µm and 0.07 µm, respectively, and the aspect ratio was 28.1 with the preferred orientation along the <001> direction. XRD and TEM results showed a high crystallinity of the ZnO nanowires. Optical measurement revealed that ZnO nanowires emitted intensive stimulated UV at 376 nm without showing visible emission related to oxygen defects.

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Effects of Growth Conditions on Properties of ZnO Nanostructures Grown by Hydrothermal Method

Cited by 2 publications

References 19 publications

Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness

Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness

Growth and UV Emission of Preferred Oriented ZnO Nanowires Using Hydrothermal Process

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