2019
DOI: 10.3740/mrsk.2019.29.10.579
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Effects of Growth Rate and III/V Ratio on Properties of AlN Films Grown on c-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

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“…For example, the higher the Al amount, the more dislocations appear in practice yielding adverse effects on the required optical properties [15]. Besides, low mismatch percent for the layers is important in crystal growth and the AlGaN-based LED structure with the AlN buffer layer examined in this paper can be grown on sapphire (Al 2 O 3 ) as it is often reported in the literature [16][17][18][19][20]. The various difficulties encountered during the production process apart from the ones mentioned, such as point defects, cracking issues, low hole concentration, junction heating effect, and low light extraction efficiency (LEE) should not be ignored as well [7].…”
Section: Introductionmentioning
confidence: 93%
“…For example, the higher the Al amount, the more dislocations appear in practice yielding adverse effects on the required optical properties [15]. Besides, low mismatch percent for the layers is important in crystal growth and the AlGaN-based LED structure with the AlN buffer layer examined in this paper can be grown on sapphire (Al 2 O 3 ) as it is often reported in the literature [16][17][18][19][20]. The various difficulties encountered during the production process apart from the ones mentioned, such as point defects, cracking issues, low hole concentration, junction heating effect, and low light extraction efficiency (LEE) should not be ignored as well [7].…”
Section: Introductionmentioning
confidence: 93%