Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers

Wu, Zili; Zhang, Xiong; Liang, Tianhui; Feng, Zhe Chuan; Cui, Yiping

doi:10.1016/j.spmi.2016.08.025

Cited by 4 publications

(1 citation statement)

References 24 publications

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“…On the other hand, the tilted energy band in the active region will increase the electron leakage into the p-type hole injection layer, which may recombine with holes in the p-region and further suppresses the hole injection capability [5]. Proposals to suppress the QCSE in the active region include using the non-polar and semipolar substrate [6,7] and utilizing the AlInGaN/AlInGaN MQW region [8,9]. However, the above methods have strict requirements for epitaxial growth technology.…”

Section: Introductionmentioning

confidence: 99%

Polarization Self-Screened Multiple Quantum Wells for Deep Ultraviolet Light-Emitting Diodes to Enhance the Optical Power

et al. 2021

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We experimentally and numerically propose a deep ultraviolet light-emitting diode (DUV LED) possessing the quantum barriers (QBs) with the gradually reduced Al composition along the [0001] orientation. The induced negative polarization bulk charges in the graded QBs can screen the positive polarization sheet charges at the QB/quantum well (QW) interface, i.e., generating the polarization self-screening effect, which weakens the electric field in the QWs. The polarization self-screened feature is important in enhancing the overlap level of the electron and hole wave functions within the active region and increasing the hole injection, thus improving the electroluminescence intensity and the optical power.

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