2019
DOI: 10.1016/j.rinp.2019.102360
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Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films

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Cited by 69 publications
(32 citation statements)
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References 36 publications
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“…As can be seen, the diffraction peaks of NiO for (111), (220), (311), (222), (400), (511), (440), and (533) planes were detected at 2θs of 19.0°, 31.5°, 36.9°, 39.05°, 45.0°, 59.51°, 65.5°, and 78.0°, respectively, which confirmed full compliance with JCPDS card no of 047‐1049. [ 32 ] Besides, diffraction peaks for (111), (200), (220), (311), and (222) observed at 2θs of 37.1°, 43.3°, 63.0°, 75.5°, and 79.5°, respectively, which are in agreement with Co 3 O 4 pattern through JCPDS card no 01‐080‐1532. [ 33 ] The crystal size of the prepared material, using the Scherer equation (D = (0.9 λ)/βcosθ), [ 34 ] obtain about 20 nm.…”
Section: Resultssupporting
confidence: 67%
“…As can be seen, the diffraction peaks of NiO for (111), (220), (311), (222), (400), (511), (440), and (533) planes were detected at 2θs of 19.0°, 31.5°, 36.9°, 39.05°, 45.0°, 59.51°, 65.5°, and 78.0°, respectively, which confirmed full compliance with JCPDS card no of 047‐1049. [ 32 ] Besides, diffraction peaks for (111), (200), (220), (311), and (222) observed at 2θs of 37.1°, 43.3°, 63.0°, 75.5°, and 79.5°, respectively, which are in agreement with Co 3 O 4 pattern through JCPDS card no 01‐080‐1532. [ 33 ] The crystal size of the prepared material, using the Scherer equation (D = (0.9 λ)/βcosθ), [ 34 ] obtain about 20 nm.…”
Section: Resultssupporting
confidence: 67%
“…It implies that the grown films undergo structural relaxation at elevated temperatures via increment in dislocation densities and low crystallite size, which infers change in growth dynamics, as explained in the later part of the article. The obtained results are well justified as an increment in crystallite size with substrate temperature (till 300 C) has been reported previously, [24][25][26] suggesting favorable growth energetics in the temperature regime of %200À300 C. However, it is also noteworthy to mention that crystallite size calculated for the sample grown at 200 C, that is, 19.98 nm, was much higher in comparison with the reported values. [24] Interestingly, the obtained 2θ values indicated tensile stress, which is expected to be uniform as the peak value (i.e., 2θ) remained identical when XRD was conducted at different positions on the grown NiO films.…”
Section: Resultssupporting
confidence: 90%
“…The obtained results are well justified as an increment in crystallite size with substrate temperature (till 300 C) has been reported previously, [24][25][26] suggesting favorable growth energetics in the temperature regime of %200À300 C. However, it is also noteworthy to mention that crystallite size calculated for the sample grown at 200 C, that is, 19.98 nm, was much higher in comparison with the reported values. [24] Interestingly, the obtained 2θ values indicated tensile stress, which is expected to be uniform as the peak value (i.e., 2θ) remained identical when XRD was conducted at different positions on the grown NiO films. However, the films grown at elevated substrate temperatures (T S ≥ 400 C) showed 2θ values approaching to bulk values, that is, unstretched NiO films (PDF #47-1049), which refer to stress relaxation via generation of higher number of dislocations, as shown in Table 1.…”
Section: Resultssupporting
confidence: 90%
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“…Jamal et al deposited the NiO thin films by RF magnetron sputtering (50 W power) using Ar gas onto the SLG substrates maintained at 100–400 °C. [ 135 ] Increasing the deposition temperature up to 400 °C carrier concentration increased reaching 3.87 × 10 16 cm −3 with hole mobility and resistivity of 2.23 cm 2 V −1 s −1 and 72 Ω cm, respectively. [ 135 ] Deevi et al determined the ionization potential (5.19 eV) and bandgap (3.81 eV) for high‐temperature annealed NiO.…”
Section: Comment On the Deposition Protocols Of Proposed Tandem Configurationsmentioning
confidence: 99%