Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

Yu, P. W.; Stutz, C. E.

doi:10.1007/bf02649995

Cited by 12 publications

(1 citation statement)

References 17 publications

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“…The 818 nm peak is bulk GaAs band edge free‐exciton (FE) peak, and the 828 nm is free‐exciton to carbon‐acceptor (FE‐A). The broad peaks at ≈1550 and 1910 nm are assigned to those from Ga‐antisite (Ga As ) and EL2 defects …”

Section: Resultsmentioning

confidence: 99%

Below‐Bandgap Photoluminescence from GaAs

Roca

Fukui

Mizuno

et al. 2019

Physica Status Solidi (b)

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The below-bandgap photoluminescence (PL) from semi-insulating (s.i.) GaAs is investigated. It is found that various electronic states that give rise to nearinfrared (NIR) PL peaks are generated through processes that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. Moreover, the PL signals from these states overlap with those from InAs quantum dots, wetting layers, and InGaAs structures, complicating the design of devices for telecommunications or intermediate band solar cells. The spatial positions of the various defects are also investigated by below-gap excitation and back-illuminated PL measurements. The possible identities of the defects are also presented. The present results provide guidelines for distinguishing the desired electronic states from thermal treatment-induced defect states.

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Section: Resultsmentioning

confidence: 99%