Effects of high-dose gamma-ray irradiation on an In_0.53Ga_0.47As high electron mobility transistor

Abstract

We investigate gamma-ray (γ-ray) irradiation effects on In0.53Ga0.47As high electron mobility transistor (HEMT). After gamma-ray radiation, irradiated HEMT show degradation of the maximum transconductance (gm,max ), unity current gain cut-off frequency (fT ), and maximum oscillation frequency (fmax ) about 12.8 %, 18.0 %, and 16.9 %, respectively, because of an increase in on-resistance (Ron) of the In0.53Ga0.47As HEMTs exposed to high-dose gamma-ray (γ-ray) radiation. Moreover, we obtain a minimum noise figure (NFmin) of about 1 dB from 8 to 40 GHz for the irradiated HEMT, which are lower values compared to non-irradiated HEMT because gate leakage current is reduced after gamma-ray irradiation.