Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

薛书文,; 祖小涛,; 苏海桥,; 郑万国,; 向霞,; 邓宏,; 杨春容,

doi:10.1088/1009-1963/16/4/043

Cited by 7 publications

(1 citation statement)

References 25 publications

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“…The film had small lattice misfit, large area, good uniformity using this method. [2] Meanwhile, the crystal structure of sapphire can be changed by ion implantation , and have a new light emitting. Interaction with defects and new structure in sapphire can explain the various optical performances, such as the stability of color center, interaction of the excess cationic charge compensation and anion vacancy defects by injecting metal ions, migration gathered in the matrix by ion implanted, theoretical calculations of electronic structure of the crystal color centers and soon.…”

Section: Introductionmentioning

confidence: 99%

Study on Electronic Structure of the Ti Ion Implantation Al2O3 (0001) Surface by First Principles

Chen²,

et al. 2013

AMR

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The First-principles based on plane-wave pseudo-potentials methods was applied to investigate the lattice parameter, electronic structure and optical property of Al2O3 (0001 ) by Ti Ion implantation . The calculation result show that the color center is form by transfer electron between 3d of Ti ion orbit energy level and Al ion 3p orbit energy level. and the absorption peak is located at the region of 2.1eV, which located in 400nm-450nm,where corresponding to the color and the color was caused by F color center

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Section: Introductionmentioning

confidence: 99%

Study on Electronic Structure of the Ti Ion Implantation Al2O3 (0001) Surface by First Principles

Chen²,

et al. 2013

AMR

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Preparation of p-type ZnO:(Al, N) by a combination of sol–gel and ion-implantation techniques

Xue

Shao

et al. 2008

Chinese Phys. B

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We report the preparation of p-type ZnO thin films on (0001) sapphire substrates by a combination of sol-gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO:Al films annealed at 600°C have converted to p-type conduction with a hole concentration of 1.6 × 1018 cm−3, a hole mobility of 3.67cm2/V·s and a minimum resistivity of 4.80 cm.ω. Ion-beam induced damage recovery has been investigated by x-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600°C. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.

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General formula for phonon-assistedn-photon absorption in solids

Deng¹,

Xiao-dong²,

Xi³

et al. 2010

Chinese Phys. B

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Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

Cited by 7 publications

References 25 publications

Study on Electronic Structure of the Ti Ion Implantation Al<sub>2</sub>O<sub>3</sub> (0001) Surface by First Principles

Study on Electronic Structure of the Ti Ion Implantation Al<sub>2</sub>O<sub>3</sub> (0001) Surface by First Principles

Preparation of p-type ZnO:(Al, N) by a combination of sol–gel and ion-implantation techniques

General formula for phonon-assistedn-photon absorption in solids

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