Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors

Liu, Bingkaï; Li, Yudong; Wen, Liping; Zhang, Xiang; Guo, Qi

doi:10.3390/s23136159

Cited by 8 publications

(3 citation statements)

References 26 publications

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“…The generation of these is known to produce dark currents I dark and the longer the acquisition time, the higher is the accumulated charge and thus the offset µ therm = I dark • t acq in charge 7 . These dark currents are especially favored by certain defects within the material 48 , which are not uniformly distributed over the CCD array, leading to another unknown distribution ϒ[µ therm ] i, j for the conversion of thermal energy into excitons. Due to the quantized nature of charge, these thermal excitons further add Poisson noise 6,7,49 .…”

Section: Signal and Detector Noisementioning

confidence: 99%

An applied noise model for scintillation-based CCD detectors in transmission electron microscopy

Zietlow,

Lindner

2024

Preprint

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Measurements in general are limited in accuracy by the presence of noise. This also holds true for highly sophisticated scintillation-based CCD cameras, as they are used in medical applications, astronomy or transmission electron microscopy (TEM). Further, signals measured with pixelated detectors are convolved with the inherent detector point spread function (PSF). The Poisson noise, arising from the quantized nature of the beam electrons, gets correlated by this convolution, which allows to reconstruct the detector PSF based on the Wiener–Khinchin theorem and the Pearson correlation coefficients under homogeneous illumination conditions. However, correlation also has a strong impact on the noise statistics of basic operations like the binning of signals, as it is usually done in electron energy-loss spectroscopy (EELS). Thus, this paper aims to give an insight into the different noise contributions occurring on such detectors, into their underlying statistics and their correlation. Detectors usually suffer from gain non-linearities and quantum efficiency deviations, which must be corrected for optimal results. All these operations influence the noise and are influenced by it, vice versa. In this work, we mathematically describe all these changes and show them experimentally. Methods on how to measure individual noise and correlation parameters are described allowing readers to implement routines for finding them. Sufficient knowledge on the noise of a measurement is not only crucial for classifying its quality and meaningfulness, but also allows for better post-processing operations like deconvolution, which is a common practice in spectroscopy to enhance signals.

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Section: Signal and Detector Noisementioning

confidence: 99%

An applied noise model for scintillation-based CCD detectors in transmission electron microscopy

Zietlow,

Lindner

2024

Preprint

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“…The objective of this study was to develop an intelligent sensor-based ultrasonic-assisted inner diameter saw cutting force system. With the development of sensors, temperature sensors [ 24 ], image sensors [ 25 ], and force sensors have appeared [ 26 ] more and more frequently, allowing performance and quality improvements in industrial applications. A six-axis force sensor was integrated for force measuring.…”

Section: Introductionmentioning

confidence: 99%

Surface Quality Improvement for Ultrasonic-Assisted Inner Diameter Sawing with Six-Axis Force Sensors

Zhao

Wang

Jiang

et al. 2023

Sensors

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Ultrasonic-assisted inner diameter machining is a slicing method for hard and brittle materials. During this process, the sawing force is the main factor affecting the workpiece surface quality and tool life. Therefore, based on indentation fracture mechanics, a theoretical model of the cutting force of an ultrasound-assisted inner diameter saw is established in this paper for surface quality improvement. The cutting experiment was carried out with alumina ceramics (99%) as an exemplar of hard and brittle material. A six-axis force sensor was used to measure the sawing force in the experiment. The correctness of the theoretical model was verified by comparing the theoretical modeling with the actual cutting force, and the influence of machining parameters on the normal sawing force was evaluated. The experimental results showed that the ultrasonic-assisted cutting force model based on the six-axis force sensor proposed in this paper was more accurate. Compared with the regular tetrahedral abrasive model, the mean value and variance of the proposed model’s force prediction error were reduced by 5.08% and 2.56%. Furthermore, by using the proposed model, the sawing processing parameters could be updated to improve the slice surface quality from a roughness Sa value of 1.534 µm to 1.129 µm. The proposed model provides guidance for the selection of process parameters and can improve processing efficiency and quality in subsequent real-world production.

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“…Recently, SOI technology has seen widespread applications in the aerospace sector due to its exceptional resistance against transient ionizing radiation, such as single-event effects [6]. However, there is a potential problem associated with the relatively thick buried oxide (BOX), which is sensitive to the total ionizing dose (TID) effect [7][8][9]. Radiation-induced trapped charges build up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage that must be applied to turn the device on).…”

Section: Introductionmentioning

confidence: 99%

Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs

Lin,

Cong,

Jia

2023

Electronics

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Many silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) are used in deep space detection systems because they have higher radiation resistance than bulk silicon devices. However, SOI devices have to face the double challenge of radiation and conventional reliability problems, such as hot carrier stress, at the same time. Thus, we wondered whether there is any interaction between reliability degradation and irradiation damage. In this paper, the effect of hot-carrier injection (HCI) on γ-ray-irradiated partially depleted (PD) SOI n-MOSFETs with a T-shaped gate structure is investigated. A strange phenomenon that accelerated the annealing effect on irradiation devices caused by HCI in 5 s was observed. That is, HCI has fast recovery ability on the irradiated narrow-channel n-MOSFETs. We explain the physical mechanism of this recovery effect qualitatively. Moreover, we designed a comparable experiment to evaluate the effect on the wide-channel devices. These results show that the narrow-channel devices are more sensitive to irradiation and HCI effects than wide-channel devices.

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Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors

Cited by 8 publications

References 26 publications

An applied noise model for scintillation-based CCD detectors in transmission electron microscopy

An applied noise model for scintillation-based CCD detectors in transmission electron microscopy

Surface Quality Improvement for Ultrasonic-Assisted Inner Diameter Sawing with Six-Axis Force Sensors

Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs

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