Effects of Hydrogen-Dilution on Opto-Structural Properties of Hot-wire CVD Grown a-Si:H/nc-Si:H Multilayer for Photovoltaics

Kherodia, Ashok; Kheraj, Vipul; Panchal, Ashish K.

doi:10.1007/s12633-017-9629-7

Cited by 7 publications

(3 citation statements)

References 52 publications

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“…This stimulates the axial growth of nanowires towards vertical. The successive decompositions of SiH 4 and CH 4 produce high density of reactive atomic H and, thus, enhance the hydrogen etching effect [ 44 , 45 ]. The reactive hydrogen etching increases the local nucleation sites for the formation of SiC nanograins as observed on the deposited layer shown in Figure 2 .…”

Section: Resultsmentioning

confidence: 99%

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

et al. 2019

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This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

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Section: Resultsmentioning

confidence: 99%

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

et al. 2019

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“…Scientists have used different techniques to obtain good quality n type nc-Si:H films under controlled doping such as plasma enhanced chemical vapor deposition (PECVD), microwave PECVD, 12 electron beam evaporation, 13 electron cyclotron resonance PECVD, 14 Si ion implantation, 15 hot wire CVD, 16 cathodic vacuum arc, 17 RF magnetron sputtering 18 etc. Furthermore, in case of selection of wafer, n type possess lower defect density, low recombination rate of charge carriers at the interface and even high resistance against degradation 10 than p type wafer.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p–n junction cell using SCAP-1D tool

Gill,

Juneja,

Dixit

et al. 2024

RSC Adv.

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“…Also, p-type nc-Si:H has been used as window layer in a-Si:H solar cells. [14,15] Different techniques have been used for the synthesis of nc-Si:H films, such as plasma enhanced chemical vapor deposition [PE-CVD], micro waves PE CVD, [17] electron beam evaporation, [18] electron cyclotron resonance PE CVD, [19] RF magnetron sputtering, [20] hot wire CVD, [21] Si ion implantation, [22] cathodic vacuum arc [23] etc. Out of these techniques PE-CVD has been extensively used for industrial applications.…”

Section: : Introductionmentioning

confidence: 99%

Effect of Phosphine Gas Conditions on Structural, Optical and Electrical Properties of Nc-Si:H Films Deposited by Cat-CVD Method

Gabhale¹,

Borate²,

Pandharkar³

et al. 2020

ES Mater. Manuf.

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Herein, n-type hydrogenated nano-crystalline silicon (nc-Si:H) thin films were synthesized using silane (SiH4) and phosphine (PH3) acted as a dopant gas by catalytic chemical vapor deposition technique (Cat-CVD). The substrate temperature was maintained at 200 0 C. The effect of PH3 flow rate on opto-electronic and structural properties of nc-Si:H has been studied using UV-Visible spectroscopy, dark conductivity, low angle XRD, Raman spectroscopy etc. From low angle XRD and Raman it was observed that incorporation of phosphorus atoms in nc-Si:H causes transformation nc-Si:H to a-Si:H. At optimized PH3 flow rate (0.3 sccm), n-type nc-Si:H films have high deposition rate (~ 29.6 Å/s) with optimum band gap (~ 1.89 eV), high dark conductivity (~ 1.52 S/cm) and low charge carrier activation energy (0.19 eV) at low hydrogen content (~ 1.83 at. %). The deposited films can be useful as n-layer Si:H based c-Si hetero-junction solar cells.

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Effects of Hydrogen-Dilution on Opto-Structural Properties of Hot-wire CVD Grown a-Si:H/nc-Si:H Multilayer for Photovoltaics

Cited by 7 publications

References 52 publications

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p–n junction cell using SCAP-1D tool

Effect of Phosphine Gas Conditions on Structural, Optical and Electrical Properties of Nc-Si:H Films Deposited by Cat-CVD Method

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