Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001)

Vasek, J. E.; Zhang, Zhenyu; Salling, C. T.; Lagally, M. G.

doi:10.1103/physrevb.51.17207

Cited by 127 publications

(71 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During Si homoepitaxy by either MBE or CVD, hydrogen increases the island density and reduces the island shape anisotropy [7,47]. Although H-termination can decrease the Si adatom diffusion rate [7], these effects can be accounted for if H somehow ''poisons'' the S B step edges, inhibiting Si adatom attachment [48].…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)

Laracuente

Whitman

2003

Surface Science

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

“…Some surfaces will undertake extreme morphologies to assure a low-energy configuration. Roughening [2,3], faceting [4,5], growth mode modification [6,7], and surface reconstructions [8][9][10] are just a few of the properties that are directly tied to surface temperature and/or adsorbate coverage (i.e. chemical potential).…”

Section: Introductionmentioning

confidence: 99%

Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)

Laracuente

Whitman

2003

Surface Science

View full text Add to dashboard Cite

“…It is documented in the literature that the incorporation of a small amount of surfactant atoms during growth can significantly affect the microstructure of a thin film. [30,38,39] Notably, in the presence of a surfactant, the epitaxial growth of (111) Ag is found to change from a multilayer to a layer-by-layer growth mode due to a higher nucleation density and the reduced surface diffusion of Ag adatoms. [39] Since the Pt films from Pt(acac) 2 contained less than 1 at.-% carbon, and oxygen contamination was not detectable, any influence of contamination on the nanostructure of Pt films from Pt(acac) 2 can be ruled out.…”

Section: Pt Films From Pt(acac)mentioning

confidence: 97%

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

Goswami¹,

Wang

Cao

et al. 2003

Chemical Vapor Deposition

View full text Add to dashboard Cite

A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12±140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350 C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal±organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH 3 ) 3 CH 3 CpPt], and b) platinum acetylacetonate [Pt(acac) 2 ], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac) 2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I (111) /I (200) = 40, the films deposited from (CH 3 ) 3 CH 3 CpPt were highly (111) oriented with I (111) /I (200) = 270. The following properties were typical of Pt films from Pt(acac) 2 as compared to Pt films from (CH 3 ) 3 CH 3 CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac) 2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3 ) 3 CH 3 CpPt was limited by the mass transport rate. Additionally, the temperature (4.2±293 K) dependence of the electrical resistivities (r) of Pt films was measured and the electron mean free paths were estimated. It was observed that r(T) deviated from Matthiessen's rule.

show abstract

“…13 A scanning tunneling microscopy (STM) study on the surface morphology of Si deposition onto sub-0.1 ML H-covered Si(100) surfaces at substrate temperatures 300-500 K, revealed a significant increase of Si island density compared to the bare surface, and the diffusion barrier, twice as large as those on the bare surface. 14 reconstruction can be readily prepared in ultrahigh vacuum (UHV). 16 We think a realspace atomic scale investigation on the initial stage of the surface roughening during Si homoepitaxy on well-controlled H terminated Si(100) surfaces will help to clarify the H role in Si homoepitaxy.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

Shen

2004

Phys. Rev. B

View full text Add to dashboard Cite

Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed.Hydrogen is shown to remain on the growth front up to at least 10 ML. The dihydride units on the 3x1 surfaces further suppress the Si adatom diffusion and increase surface roughness.

show abstract

Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001)

Cited by 127 publications

References 27 publications

Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)

Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

Contact Info

Product

Resources

About

Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001)

Cited by 127 publications

References 27 publications

Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)

Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)

MOCVD of Platinum Films from (CH3)3CH3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity

Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

Contact Info

Product

Resources

About

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity