2018
DOI: 10.1016/j.physb.2018.06.014
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Effects of hydrostatic pressure on the band structure in two-dimensional semiconductor square photonic lattice with defect

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Cited by 34 publications
(5 citation statements)
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“…The reported results indicate that the optical response in two-dimensional photonic crystals (2D-PC) is mainly due to the applied pressure. This is confirmed in the study by F. Segovia et al [24,25], which reports the shift to higher frequencies of the PBS with increasing applied pressure in 2D-PC when the circular scatterers are arranged in a square and hexagonal lattice. A similar behavior of the PBS with pressure is found when considering triangular cross-section air scatterers embedded in GaAs [26,27].…”
Section: Introductionsupporting
confidence: 72%
“…The reported results indicate that the optical response in two-dimensional photonic crystals (2D-PC) is mainly due to the applied pressure. This is confirmed in the study by F. Segovia et al [24,25], which reports the shift to higher frequencies of the PBS with increasing applied pressure in 2D-PC when the circular scatterers are arranged in a square and hexagonal lattice. A similar behavior of the PBS with pressure is found when considering triangular cross-section air scatterers embedded in GaAs [26,27].…”
Section: Introductionsupporting
confidence: 72%
“…N. Porras y C. Duque [23] utilizaron el MEOP para analizar la dependencia de la presión hidrostática y la temperatura sobre la EBF de un CF bidimensional, para la polarización TM y TE, reportaron que al modificar la presión hidrostática y la temperatura generaba desplazamientos de la EBF, además generaba cambios en el ancho de las bandas prohibidas superiores para la polarización TM y para la polarización TE permanecían inalteradas. F. Segovia y H. Vinck [24] trabajaron la EBF de un CF-2D defectivo con red cuadrada compuesto por cilindros infinitos de un semiconductor en un fondo de aire utilizando el MEOP, analizaron los efectos de la temperatura y la presión hidrostática, sus resultados presentaron un desplazamiento del modo defectivo a altas frecuencias a medida que aumentaban la presión hidrostática manteniendo una temperatura constante dentro de la BFP. Las anteriores investigaciones se centraron en estudiar estructuras compuestas por GaAs, de acuerdo con estos resultados, surge la necesidad de un estudio adicional sobre sobre un material semiconductor perteneciente también al grupo III-V que no altere drásticamente el valor de la permitividad dieléctrica al variar un agente externo.…”
Section: Antecedentesunclassified
“…There are several numeric tools that can be used for the calculation of the photonic crystal band structure, such as the plane wave expansion and finite element methods. (12,13) Although the photonic crystal band structure is strongly related to the geometric configuration and refractive index distribution of photonic crystals, the relationships among them are not intuitive. The change in band structure depending on the geometric parameters and refractive index distribution is complex and nonlinear.…”
Section: Introductionmentioning
confidence: 99%