Effects of Hydroxyethyl Cellulose and Colloidal Silica Abrasive on the Hydrophilicity of Polished Si Wafer Surfaces

Tsuchiya, Kohsuke; Mori, Yuichi; Kawaguchi, Masami

doi:10.1149/2.0021707jss

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…The surface free energy of the metal NPs is expected to increase upon adsorption of water containing HEC on the surface. This is supported by a recent study of the surface free energy change as a function of the concentration of HEC on Si wafer surfaces 32 in which the surface free energy is shown to increase with the decrease of HEC in aqueous solution. Under an elevated RH% in the atmosphere, the adsorption of water would effectively dilute the concentration of HEC near the particle surface, thus leading to the increase of the surface free energy.…”

Section: ■ Results and Discussionsupporting

confidence: 57%

“…The results, indeed, indicate that the sintering time decreases for the disappearance of smaller Ag and Cu NPs (a,b) and the sintering temperature decreases for the growth of larger Ag and Cu NPs (d,e). By further considering that the surface free energy of the AgCu alloy can be approximated as an average of those of Ag and Cu based on a recent study, 32 that is, 145 μJ/cm 2 from the average of 120 and 170 μJ/cm 2 , the results (Figure 9c,f) show the disappearance of smaller AgCu NPs (c) and sintering temperature decrease for the growth of larger AgCu NPs. The surface free energy changes clearly play an important role in the sintering process as demonstrated by the GT model simulation results above.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Silver–Copper Alloy Nanoinks for Ambient Temperature Sintering

et al. 2022

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There is an increasing need to reduce the silver content in silver-based inks or pastes and achieve low-temperature sintering for scalable and low-cost production of printed wearable electronics. This need depends on the ability to control the metal composition and the surface properties of the nanoinks. Alloying silver with copper provides a pathway for meeting the need in terms of cost reduction, but little is known about the composition controllability and the low-temperature sintering capability. We report herein a scalable wet chemical synthesis of bimetallic silver–copper alloy nanoinks with room temperature sintering properties. The bimetallic alloy nanoparticles with a controllable composition can be formulated as stable nanoinks. The nanoinks printed on paper substrates are shown to sinter under room temperature. In addition to composition dependence, the results reveal an intriguing dependence of sintering on humidity above the printed nanoink films. These findings are assessed based on theoretical simulation of the sintering processes via surface-mediated sintering and interparticle necking mechanisms in terms of nanoscale adsorption, adhesion and diffusion, and surface free energies. Implications of the findings for room temperature fabrication of wearable sensors are also discussed.

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Section: ■ Results and Discussionsupporting

confidence: 57%

Section: ■ Results and Discussionmentioning

confidence: 99%

Silver–Copper Alloy Nanoinks for Ambient Temperature Sintering

et al. 2022

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“…Wetting ability measurement.-Wetting ability of slurry and hydrophilicity of wafer surface also play an important role in scratch reduction. 30 sion of deionized water is about 72.1 mN/m. It is seen from Fig.…”

Section: Large Particle Counts As a Function Of Eda Concentrations-mentioning

confidence: 99%

Role of Dispersant Agent on Scratch Reduction during Copper Barrier Chemical Mechanical Planarization

Liu

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

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The chemical mechanical planarization (CMP) has been one of the major manufacturing process to provide global and local surface planarizations in integrated circuits (IC) fabrications. Defects such as micro-scratches generated during CMP can lead to severe circuit failure, which affects yield. In the present work, ethoxylated decylalchohol (EDA) was used as dispersant agent to prevent the particles agglomeration to reduce scratches. Firstly, the effect of EDA on particle size distribution (PSD) of the slurry was investigated by dynamic light scattering (DLS) method. Then the effect of EDA on large particle counts (LPC) was studied through a dual sensor single particle optical sensing (SPOS) analysis method. The wetting ability of slurries as a function of EDA concentration was also studied. Finally, the defect scan tool and scanning electron microscope (SEM) reviewer were used to identify the scratch defects. The results show that the addition of EDA into the slurry can enhance the dispersity of colloidal silica abrasives and significantly reduce the number of large particles in the slurry, the SEM review results show that the scratch counts remarkably decreases with EDA concentration increasing. It can be demonstrated that the EDA can effectively reduce the scratch counts.

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“…[8][9][10] Several chemical reagents have been introduced into Si final polishing slurry to optimize the polishing surface quality which was always described to be Haze value and the number of micro-defects. [11][12][13][14][15][16][17][18] In this study, we introduced water-soluble polymers into slurry to reduce the number of micro-defects in Si final polishing process. Polishing tests were performed with water-soluble polymer contained slurry micro-defects were analyzed after polishing tests.…”

mentioning

confidence: 99%

Study on the Mechanism of Micro-Defect Reduction during Si Final Polishing with Water-Soluble Polymers

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

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The effect of water-soluble polymer in alkaline slurry on the micro-defect during Si final polishing was investigated. With the concentration of hydroxyethyl cellulose (polymer A) 0.15wt% and polyoxyethylene ether (polymer B) 0.05wt%, Haze value and the number of micro-defects (larger than 120nm) were reduced to 0.01 ppm and 7, respectively, on a 300mm silicon wafer surface. Also, the surface roughness was reduced from 17.2 to 0.153nm. Through the comprehensive analysis of slurry viscosity and Zeta Potential measurement, the mechanism of water-soluble polymers for micro-defect reduction during Si final polishing was discussed. Polymer B coated on the surface of SiO 2 particle forming a "soft shell", which functions as a "soft abrasive" and thus reduces friction between wafer surface and slurry abrasives. As for polymer A, the O atomic of -OH group in polymer A molecular could combine with Si-H bond on the surface of silicon wafer to form the hydrogen bond, like Si-H. . . O bond. As such, polymer A can be adsorbed on the surface of the silicon wafer to form a hydration film, which also can reduce friction between wafer surface and slurry abrasives/pad asperities. With the joint action of polymer A and polymer B, as experimental results showed, the number of micro-defects and Haze value in Si final polishing process can be significantly reduced.

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Effects of Hydroxyethyl Cellulose and Colloidal Silica Abrasive on the Hydrophilicity of Polished Si Wafer Surfaces

Cited by 6 publications

References 11 publications

Silver–Copper Alloy Nanoinks for Ambient Temperature Sintering

Silver–Copper Alloy Nanoinks for Ambient Temperature Sintering

Role of Dispersant Agent on Scratch Reduction during Copper Barrier Chemical Mechanical Planarization

Study on the Mechanism of Micro-Defect Reduction during Si Final Polishing with Water-Soluble Polymers

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