Effects of <i>in situ</i> doping from B2H6 and PH3 on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition

Doris, B.; Fretwell, J.; Erskine, J. L.; Banerjee, Sanjay K.

doi:10.1063/1.119207

Cited by 8 publications

(5 citation statements)

References 8 publications

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“…This means that the reaction temperature of hydrogen desorption from Si-H is shifted lower for boron-doped films than that for undoped films in an opposite manner for the phosphorus-doped film, as predicted by the result of temperature programmed desorption ͑TPD͒ of hydrogen from each doped layer. 10 In our study, when B 2 H 6 was supplied along with Si 2 H 6 , doping efficiency was low; however, when B 2 H 6 was supplied alternately with Si 2 H 6 , the efficiency increased by about one order of magnitude. These facts clearly show that the doping method used in MLE is advantageous for impurity doping technology.…”

Section: Resultscontrasting

confidence: 42%

“…This phenomenon seems to depend on the effect that the desorption temperature of hydrogen for phosphorus-doped film shifts to a higher temperature compared to intrinsic Si͑100͒. 10 The coverage of phosphorus influences not only the surface migration, but also the surface reaction rate of Si-H species for Si growth, namely, a higher concentration of phosphorus on Si͑100͒ acts to prevent hydrogen desorption from Si-H adsorbate. It is assumed that the Si-H bonding of P-SiH heterodimers is more stable than that of Si-SiH homodimers.…”

Section: Resultsmentioning

confidence: 99%

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Method for Thin-Film Technology of Si with Doping

Nishizawa¹,

Kurabayashi²,

Oizumi³

et al. 2003

J. Electrochem. Soc.

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Layer-by-layer growth of single crystalline Si was examined with a doping method that applied a low-temperature process. Si2H6 (99.99%) and dopant precursor, PH3 (or B2H6false), were injected intermittently on the Si(100) surface, and an atomically smooth surface was obtained with atomic-scale layer controllability of the growth thickness. At a process temperature of 525°C, an n-type layer doped with phosphorus was obtained up to the carrier concentration of 2.8×1019 cm−3, and a smooth surface of the film was obtained under 2×1019 cm−3. The carrier concentration of the p-type layer doped with boron reached 5×1020 cm−3 while maintaining an atomically smooth surface at a growth temperature of 510°C. Nanometer-scale multilayer structures using doping were fabricated, and the doping profile was sufficiently sharp and on the order of nanometers. © 2003 The Electrochemical Society. All rights reserved.

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Section: Resultscontrasting

confidence: 42%

Section: Resultsmentioning

confidence: 99%

Method for Thin-Film Technology of Si with Doping

Nishizawa¹,

Kurabayashi²,

Oizumi³

et al. 2003

J. Electrochem. Soc.

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“…In many low-temperature epitaxial Si growth processes at temperatures below the H desorption temperature (about 540 • C for monohydride on an Si(001) surface [90]), the activation energy for growth is consistent with that for hydrogen desorption [71,72,91]. Namely, the H elimination from the H-terminated Si surface is the rate-limiting process for epitaxial growth.…”

Section: First-principles Simulation Of H Abstraction From Hydrogenat...mentioning

confidence: 59%

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

Yasutake¹,

Kakiuchi²,

Ohmi³

et al. 2011

J. Phys.: Condens. Matter

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To grow epitaxial Si films with atomic- and electronic-level perfection, a high-temperature chemical vapor deposition (CVD) process (>1000 °C) has been generally employed. To reduce the growth temperature below 600 °C but keeping a high deposition rate, other energy sources than thermal heating are required. Atmospheric pressure plasma CVD (AP-PCVD) is considered to be suitable for fabricating high-quality films at high deposition rates due both to the high radical density and to the low ion bombardment against the film surface, because the collision frequency among ions and neutral atoms is high. The present study focuses on the low-temperature growth of epitaxial Si, and experimentally demonstrates that AP-PCVD is capable of growing epitaxial Si films with high perfection applicable for semiconductor devices. It is found that the pre-growth cleaning of the Si surface by H(2) AP plasma is effective to grow high-purity Si films, and that the exposure of a film-growing surface to AP plasma during growth is important to form particle-free and defect-free Si films. From the experimental results and the first-principles molecular dynamics simulations of surface atomic reactions, it can be mentioned that both H atoms in the AP plasma and high-density He atoms having thermal kinetic energy contribute to the reduction of growth temperature by supplying considerable energy to the surface.

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“…For instance, group V impurities, like arsenic, antimony, and bismuth, have been widely employed as surfactants to control surface stress in heteroepitaxial growth . In addition, for formation of ultrashallow junction with high dopant concentrations (required for nanometer-scale electronic devices), in situ chemical doping has been recognized as a working alternative to currently widely used low-energy ion implantation . To achieve precise control of doping profiles, it would be necessary to better understand the effect of surface and/or subsurface dopant atoms on surface chemical reactions, along with the effect of adsorbates on dopant dynamics at the surface and/or subsurface layers.…”

Section: Introductionmentioning

confidence: 99%

“…4 In addition, for formation of ultrashallow junction with high dopant concentrations (required for nanometer-scale electronic devices), in situ chemical doping has been recognized as a working alternative to currently widely used low-energy ion implantation. 5 To achieve precise control of doping profiles, it would be necessary to better understand the effect of surface and/or subsurface dopant atoms on surface chemical reactions, along with the effect of adsorbates on dopant dynamics at the surface and/or subsurface layers. As device dimensions shrink below 100 nm, indeed, the dopant-surface interactions become of great concern in various device manufacturing processes, such as etching and deposition.…”

Section: Introductionmentioning

confidence: 99%

Effects of Subsurface Boron and Phosphorus on Surface Reactivity of Si(001): Water and Ammonia Adsorption

2004

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Using density functional slab calculations with planewave basis set and pseudopotentials, we have examined the effect of subsurface boron and phosphorus on the surface chemical properties of Si(001). We compare the adsorption behaviors of water and ammonia between B-or P-modified and clean Si(001) surfaces. On the B-modified surface, the charge polarization of two B-connected dimers is altered significantly. Our calculation shows that approximately one electron is transferred from the local surface to the subsurface boron, thereby leading both buckled-up and -down atoms of B-connected dimers to be electron-poor (electrophilic). On the other hand, subsurface P brings about no significant change in surface electronic structure. Only about onetenth of an electron is transferred from the subsurface P to the local surface. As a result, relative to the clean surface, the adsorption properties of water and ammonia change noticeably on the B-modified surface while varying insignificantly on the P-modified surface.

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Effects of in situ doping from B2H6 and PH3 on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition

Abstract: Chemical vapor deposition of undoped and in-situ boron-and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Cited by 8 publications

References 8 publications

Method for Thin-Film Technology of Si with Doping

Method for Thin-Film Technology of Si with Doping

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

Effects of Subsurface Boron and Phosphorus on Surface Reactivity of Si(001): Water and Ammonia Adsorption

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