Effects of implantation and annealing on the Raman spectrum of InP and GaAs

Abels, L. L.; Schmidt, R. L.; Comas, J.

doi:10.1016/0378-5963(81)90021-0

Cited by 31 publications

(4 citation statements)

References 20 publications

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“…A HIM image showing the surface roughness of the Au film is shown inset in Fig 4(c). In each of the spectra we observe both the longitudinal optical (LO) phonon and forbidden transverse optical (TO) phonons for InP due to the breaking of crystal symmetry after sputtering 28 .…”

Section: +mentioning

confidence: 99%

Visible wavelength surface-enhanced Raman spectroscopy from In-InP nanopillars for biomolecule detection

Murdoch

Portolés

Tardio

et al. 2016

Applied Physics Letters

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Visible wavelength surface-enhanced Raman spectroscopy (SERS) has been observed from bovine serum albumin (BSA) using In-InP nanopillars synthesised by Ar gas cluster ion beam sputtering of InP wafers. InP provides a high local refractive index for plasmonic In structures, which increases the wavelength of the In surface plasmon resonance. The Raman scattering signal was determined to be up to 285 times higher for BSA deposited onto In-InP nanopillars when compared with Si wafer substrates. These substrates demonstrate the label-free detection of biomolecules by visible wavelength SERS, without the use of noble metal particles. Surface-enhanced Raman spectroscopy (SERS) utilises the resonant excitation of localised surface plasmons to boost the scattering efficiency from samples containing few or even single molecules 1-3. The technique's usefulness for non-destructive and label-free characterisation has resulted in a large body of research since its discovery in 1974 3,4. Gold and silver nanoparticles have historically been the most often employed SERS substrates due to their strong visible wavelength localised surface plasmon resonance (LSPR) 5,6. However, the price and scarcity of noble metals remains one of the major drawbacks of SERS and, as such, it has been recognised that more cost

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Section: +mentioning

confidence: 99%

Visible wavelength surface-enhanced Raman spectroscopy from In-InP nanopillars for biomolecule detection

Murdoch

Portolés

Tardio

et al. 2016

Applied Physics Letters

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“…Si+ ions were implanted into the substrates with a fluence of 1015 cm-2 which is sufficient to produce amorphous layers and at energies of 35, 50, 100, 200 and 300 keV, respectively [2][3][4][5][6]91. Isochronal annealing was carried out for 10 sec up to 800 OC in an argon atmosphere using an infrared imaging furnace.…”

Section: Methodsmentioning

confidence: 99%

“…Amorphous layers produced by Si+ ions implantation in InP have been investigated by Rutherford backscattering (RBS) [2-41 and transmission electron microscopy (TEM) [5] and Rarnan scattering [6] measurements. We have so far investigated the annealing behavior of damaged layers by ion implantation in Si [7], GaAs [8] and InP [9] by the piezoelectric PAS.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the recrystallization of amorphized InP layers using photoacoustic technique

et al. 1994

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“…Irradiation damage on GaAs has already been extensively studied, including the determination of the range of protons and helium ions [8], irradiation induced changes of index of refraction [9], carrier compensation [10], and annealing effects [11], to give some examples. However, for InGaP material we found only a few reports of irradiation experiments, mostly related to the electrical parameters of the devices [12,13] and few about defects in the material [14,15].…”

Section: Introductionmentioning

confidence: 99%

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi

Khachadorian

Suárez

et al. 2016

Journal of Applied Physics

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We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially-resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase of the intensity of LO phonons and a decrease of the luminescence were observed. We associate these changes with the the creation of defects in the damage region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with SRIM simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20 % for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation we propose an increase of 40 % in the electronic stopping power for InGaP.

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Effects of implantation and annealing on the Raman spectrum of InP and GaAs

Cited by 31 publications

References 20 publications

Visible wavelength surface-enhanced Raman spectroscopy from In-InP nanopillars for biomolecule detection

Visible wavelength surface-enhanced Raman spectroscopy from In-InP nanopillars for biomolecule detection

Investigation of the recrystallization of amorphized InP layers using photoacoustic technique

Investigation of proton damage in III-V semiconductors by optical spectroscopy

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