Effects of implantation temperature on the structure, composition, and oxidation resistance of aluminum-implanted SiC

Abstract

a -S i C crystals were implanted with aluminum to a high dose at room temperature or 800 °C. Transmission electron microscopy showed that SiC was amorphized by room temperature implantation but remained crystalline after 800 °C implantation. Crystalline aluminum carbide was formed and aluminum redistribution took place in SiC implanted at 800 °C. Implanted and unimplanted crystals were oxidized in 1 atm flowing oxygen at 1300 °C. Amorphization led to accelerated oxidation of SiC. The oxidation resistance of SiC implanted at 800 °C was comparable with that of pure SiC. The oxidation layers formed on SiC implanted at both temperatures consisted of silica embedded with mullite precipitates. The phase formation during implantation and oxidation is consistent with thermodynamic predictions. The results from our current and earlier studies suggest that there exists an optimum range of implantation temperature, probably above 500 °C but below 800 °C, which preserves the substrate crystallinity and retains the high aluminum dosage, for the enhancement of oxidation resistance of SiC.

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

“…High temperature (600, [24] 700, [29] and 1000 • C [30] ) implantations are used to prevent amorphization. [31] In the same annealing time, the activation rate of the implanted nitrogen ions rises with increasing annealing temperature as indicated from the experiment in Ref. [32].…”

Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

“…A higher implantation temperature above 500 • C, [22] rapid thermal annealing and a higher annealing temperature above 1650 • C [26,27] are in demand to receive a significant activation rate. In order to improve the surface quality of the ion-implanted layer, a protect cap should be used during the annealing period in the future.…”

Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions

“…A number of papers concerned the implantation of 4H silicon carbide crystals . The implantation with relatively light helium ions was studied in view of smart‐cut technology, while those with germanium, aluminum, phosphorous, and other ions were mainly in view of introducing the electrically active dopant. A relatively small amount of papers described the implantation with high‐energy ions .…”

“…A relatively small amount of papers described the implantation with high‐energy ions . The self‐annealing effects in SiC crystals have been widely studied in the cases of aluminum, oxide, and silicon ion implantation . In most of the papers, the basic characterization techniques were Rutherford backscattering spectrometry (RBS)/channeling methods, and some papers included recording of the rocking curves.…”