Effects of in situ annealing on GaInNAs solar cells

Kurtz, Sarah; King, Richard R.; Law, D. C.; Ptak, Aaron J.; Geisz, John F.; Karam, N.H.

doi:10.1109/pvsc.2013.6744887

Cited by 7 publications

(8 citation statements)

References 13 publications

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“…This directly indicates a movement of the pn-junction location and that the conductivity type of the GaInNAs layer must have changed its character upon annealing. Conductivity type changes in GaInNAs have also been seen by other authors in thermally annealed MOCVD-grown GaInNAs [17,18] and in MBE-grown GaInNAs [19].…”

Section: P-i-n Solar Cellssupporting

confidence: 79%

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Tukiainen

Aho

Polojärvi

et al. 2016

JGE

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Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-in solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-in solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.

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Section: P-i-n Solar Cellssupporting

confidence: 79%

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Tukiainen

Aho

Polojärvi

et al. 2016

JGE

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“…It can be seen that the EQEs of GaInNAs solar cell are obviously enhanced by DBR in the corresponding wavelength range. Moreover, compared with few reported results of dilute nitride solar cells grown by MOVPE, 6,22) the spectral response here shows an encouraging improvement. The photocurrents calculated from measured spectral responses (J sr ) of the devices with and without DBR are 13.66 mA cm −2 and 11.17 mA cm −2 (AM0 spectrum), respectively.…”

supporting

confidence: 66%

High current of GaInNAs solar cell integrating distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

Zhang¹,

Yang²,

Li³

et al. 2021

Appl. Phys. Express

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GaInNAs junctions can be applied to the lattice-matched five-junction (5J) or six-junction (6J) solar cells to achieve ultra-high efficiency. In this work, a GaInNAs solar cell integrating distributed Bragg reflectors (DBR) is grown by metalorganic vapor phase epitaxy. According to external quantum efficiency measurements, the photocurrent can be improved by ∼20% due to DBR. Meanwhile, a short-circuit current (J sc ) of GaInNAs DBR-cell is obtained high as 13.78 mA cm −2 under the air mass (AM0) spectrum, which is completely satisfied the demand of 36%-efficiency 5J solar cell (∼ 12 mA cm −2 ). Finally, Dark-IV characteristics reveal that the introduction of DBR does not deteriorate GaInNAs quality.

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“…In the D1 design, a nominally intrinsic InGaAsN(Sb) absorber layer of 1.0-μm thickness was used, similar to many previous works on InGaAsN(Sb) cells. 9,13 D2 is identical except for the use of a thinner absorber of 0.65-μm thickness, as listed in Table 1. Both D1 and D2 include a 0.2-μm sacrificial dilute nitride layer to incorporate any pre-existing surface impurities, as suggested by Ptak.…”

Section: Methodsmentioning

confidence: 99%

“…8 Due to the short diffusion length in InGaAsN(Sb), an n-i-p structure is commonly used to enhance carrier collection and provide an effective "collection length," which is longer than the diffusion length; furthermore, thick n-i-p InGaAsN(Sb) and InGaAsN(Bi) junctions are highly sensitive to background doping levels, and those doping levels are strongly dependent on annealing conditions. 9,10 In some cases, annealing can convert the background doping from p-type to n-type, causing the p-n junction to be located at the back of the absorber and reducing the quantum efficiency. 9 Consequently, these subcells with materials having lower mobilities must be carefully considered within the context of operating characteristics of the complete device.…”

Section: Introductionmentioning

confidence: 99%

“…9,10 In some cases, annealing can convert the background doping from p-type to n-type, causing the p-n junction to be located at the back of the absorber and reducing the quantum efficiency. 9 Consequently, these subcells with materials having lower mobilities must be carefully considered within the context of operating characteristics of the complete device.…”

Section: Introductionmentioning

confidence: 99%

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Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

et al. 2017

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READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.nrc-cnrc.gc.ca/eng/copyright Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions?Contact the NRC Publications Archive team at PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.nrc-cnrc.gc.ca/eng/view/object/?id=e7c07e6d-fdaa-432b-9de5-1d417eac1341 http://nparc.nrc-cnrc.gc.ca/fra/voir/objet/?id=e7c07e6d-fdaa-432b-9de5-1d417eac1341Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices Abstract. Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ∼1e Vfor optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA∕cm 2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (V OC ) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on fieldaided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA∕cm 2 , we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun ¼ 100 mW∕cm 2 ), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA∕cm 2 in all four subcells.

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Effects of in situ annealing on GaInNAs solar cells

Cited by 7 publications

References 13 publications

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

High current of GaInNAs solar cell integrating distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

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