Effects of interface dislocations on properties of ferroelectric thin films

Zheng, Yue; Wang, Biao; Woo, C.H.

doi:10.1016/j.jmps.2007.01.011

Cited by 31 publications

(18 citation statements)

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“…2(b), the domain pattern near the interface is perturbed by the inhomogeneous but overall compressive strain field of c I dislocation, 34 leading to a "dead layer" of polarization field similar to that observed in ferroelectric thin films. 12,13 On the other hand, we found that c II dislocation significantly increases the ferrotoroidic transition temperature of the nanodot, manifested with a nonzero toroidal moment at temperature over 1000 K. For this case, evolution of the toroidal moment consists of two distinct stages. At high temperature region, the toroidal moment remains small and increases slowly as temperature decreases.…”

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confidence: 69%

“…Furthermore, domain pattern, ferroelectric transition temperature, polarization, and other static properties (e.g., electrical conductance) are strongly modified near the "defective" regions. [9][10][11][12][13][14] Although it is still a long way toward "defect engineering," the revealed effects of defects in ferroelectrics during the past decades have provided us an exciting picture.…”

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confidence: 99%

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Pinning effects of dislocations on vortex domain structure in ferroelectric nanodots

Chen

Zheng

Wang

2014

Applied Physics Letters

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confidence: 69%

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confidence: 99%

Pinning effects of dislocations on vortex domain structure in ferroelectric nanodots

Chen

Zheng

Wang

2014

Applied Physics Letters

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“…Using the micromechanics concept of eigenstrains, it is possible to introduce any arbitrary distribution of dislocations in a phase-field model, and it has been applied to the domain nucleation and spatial distribution. There have also been attempts to study the various factors that influence the coercive field in bulk single crystals, ceramics, and thin films, including existing domain walls, 26,60,61 twin wall width, 25,62 grain boundaries, [63][64][65] dislocations [66][67][68] as well as strain. 69 There have been a number of other recent developments in the applications of phase-field to ferroelectrics.…”

Section: Summary Remarksmentioning

confidence: 99%

Phase‐Field Method of Phase Transitions/Domain Structures in Ferroelectric Thin Films: A Review

Chen

2008

Journal of the American Ceramic Society

477

241

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This article briefly reviews recent applications of phase‐field method to ferroelectric phase transitions and domain structures in thin films. It starts with a brief introduction to the thermodynamics of coupled electromechanical systems and the Landau description of ferroelectric transitions in homogeneous ferroelectric single crystals. The thermodynamic potentials of a homogeneous crystal under different mechanical boundary conditions are presented, including the thin‐film boundary conditions. The phase‐field approach to inhomogeneous systems containing domain structures is then outlined. It describes a domain structure using the spatial distribution of spontaneous polarization. The evolution of a domain structure towards equilibrium is driven by the reduction in the total‐free energy of an inhomogeneous domain structure including the chemical driving force, domain wall energy, electrostatic energy as well as elastic energy. A number of examples are discussed, including phase transitions and domain stability in ferroelectric thin films and superlattices. It is demonstrated that using a set of independently measured thermodynamic parameters for the corresponding bulk single crystals, the phase‐field approach is able to quantitatively predict not only the strain effect on phase transition temperatures but also the correct ferroelectric domain structures for a given strain and temperature.

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“…The semi-implicit Fourier-spectral method is employed to solve the partial differential equation (21) in the present work. 34 In the present study, two dimensional (2D) phase field simulation were conducted under plane strain condition.…”

Section: Simulation Modelmentioning

confidence: 99%

“…By using the phase field model, the effect of interfacial dislocations on the paraelectric (PE) loop and the domain structure of ferroelectric thin film was investigated. [19][20][21][22] With pre-existed bi-domain structures of 180 /90 domain walls, Kontsos and Landis 22 investigated the interactions between domain walls and an array of dislocations and the pinning strength of the dislocations on domain wall in ferroelectric single crystals by using finite element based phase field approach.…”

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Micro-/macro-responses of a ferroelectric single crystal with domain pinning and depinning by dislocations

Wang

Cao

et al. 2013

Journal of Applied Physics

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Articles you may be interested inFerroelectric domain structure of PbZr0.35Ti0.65O3 single crystals by piezoresponse force microscopy Domain evolution in ferroelectric thin films during fatigue process J. Appl. Phys. 97, 104102 (2005); 10.1063/1.1894603 90° domain wall relaxation and frequency dependence of the coercive field in the ferroelectric switching processPhase field simulations are conducted to investigate the micro-structural signature and the macro-response of a ferroelectric single crystal with domain pinning and depinning phenomena by dislocation arrays. It is shown that due to the presence of the dislocation arrays, a domain with polarizations antiparallel to an applied field can survive under the small amplitude of applied field. The residual domain serves as a pre-existing nucleus during the following macroscopic switching via only domain wall motion. The pinned domain will be depinned when the external electric field amplitude exceeds a critical value, which highly depends on the dislocation spacing in the dislocation array. Due to the pinning and depinning effect, an asymmetric hysteresis loop of polarization versus electric field might appear when a bias field is applied. V C 2013 AIP Publishing LLC.

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Effects of interface dislocations on properties of ferroelectric thin films

Cited by 31 publications

References 39 publications

Pinning effects of dislocations on vortex domain structure in ferroelectric nanodots

Pinning effects of dislocations on vortex domain structure in ferroelectric nanodots

Phase‐Field Method of Phase Transitions/Domain Structures in Ferroelectric Thin Films: A Review

Micro-/macro-responses of a ferroelectric single crystal with domain pinning and depinning by dislocations

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