Effects of interfacial organic layers on thin film nucleation in atomic layer deposition

Dube, Abhishek; Sharma, Manish; Paul, Frédéric; Engstrom, J. R.

doi:10.1063/1.2360902

Cited by 24 publications

(30 citation statements)

References 20 publications

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“…103 In comparison, using a viscous flow reactor and depending on dose times, values of ϳ0.9-3.0 A cycle −1 have been reported for this same pro-cess at 180°C. As discussed above, Ti͓N͑CH 3 ͒ 2 ͔ 4 is delivered via a supersonic molecular beam, while NH 3 is introduced via a glass capillary array effusive doser.…”

Section: Effects Of Interfacial Organic Layers On Thin Film Growth VImentioning

confidence: 84%

“…This SiO 2 layer, hereafter referred to as "chemical oxide," was used throughout this work and is reported to have a surface density of Siu OH groups of ϳ5 ϫ 10 14 cm −2 . 103,104 Quantifying the absolute density of a SAM is a challenge. The first of these produces, in one step, a hydrophobic uCH 3 terminated SAM.…”

Section: Straight-chain Self-assembled Monolayersmentioning

confidence: 99%

“…103,147 In Figs. This form exhibits the following characteristics: D ͉ n=0 =0, dD / dn ͉ n=0 = ␣D ϱ Ј , and dD / dn ͉ n→ϱ = D ϱ Ј ; i.e., the initial deposited thickness per cycle is a fraction ␣ of the asymptotic value ͑D ϱ Ј ͒ but approaches it with an exponential decay constant of m cycles.…”

Section: Effects Of Interfacial Organic Layers On Thin Film Growth VImentioning

confidence: 99%

“…Furthermore, in situ IR showed that Al 2 O 3 films grown on the uCOOH SAM were similar to those grown on SiO 2 . [97][98][99][100][101][102] Finally, we will review work examining the growth of TiN thin films on organic layers using ALD, 103,104 with emphasis on the evolution of the growth processes. 80 ALD using copper͑I͒ N,NЈ-di-sec-butylacetamidinate, ͓Cu͑ s Bu-amd͔͒ 2 , and H 2 has been used to form a thin Cu film on top of a uCOOH terminated SAM.…”

Section: Introductionmentioning

confidence: 99%

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Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Interactions between radical growth precursors on plasma-deposited silicon thin-film surfacesThe interfaces between inorganic and organic materials are important to a wide variety of technologies. A significant challenge concerns the formation of these interfaces when the inorganic layer must be grown on a pre-existing organic layer. In this review the authors focus on fundamental aspects of inorganic-organic interface formation using transition metal coordination complexes and atomic layer deposition. First, the authors discuss aspects of the synthesis and characterization of ultrathin interfacial organic layers, formed mostly on SiO 2 and possessing a variety of functional groups, including layers with a branched microstructure. The authors go on to discuss the reactions of transition metal coordination complexes with these layers. A number of factors control the uptake of the transition metal complex and the composition of the adsorbed species that are formed. These include the identity, density, and dimensionality or spatial distribution of the functional groups. At room temperature, adsorption on layers that lack functional groups results in the penetration of the organic layer by the transition metal complex and the reaction with residual uOH at the organic/SiO 2 interface. Adsorption on layers with a mostly two-dimensional arrangement of reactive functional groups results in the formation of molecular "bipods," where the surface bound functional groups react with the complex via two ligand exchange reactions. In contrast, for layers that possess a high density of functional groups arranged three dimensionally, the transition metal complex can be virtually stripped of its ligands. Atomic layer deposition on interfacial organic layers also depends strongly on the density and accessibility of reactive functional groups. On surfaces that possess a high density of functional groups, deployed two dimensionally, growth via atomic layer deposition is initially weakly attenuated, mostly uniform and smooth, and eventually evolves to growth characteristic of unmodified SiO 2 . Growth on layers that lack sufficient densities of functional groups is initially strongly attenuated, in contrast, and the resulting films are rough, severely islanded and three dimensional. As a consequence, there is a correlation between the strength of the initial attenuation in the rate of growth and the thin film morphology. Correlations between the initial uptake of the transition metal complex by the organic layer and the initial rate of thin film growth are less direct, however, as the composition and structure of the chemisorbed species must also be considered.

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Section: Effects Of Interfacial Organic Layers On Thin Film Growth VImentioning

confidence: 84%

Section: Straight-chain Self-assembled Monolayersmentioning

confidence: 99%

Section: Effects Of Interfacial Organic Layers On Thin Film Growth VImentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…An ab initio study based on density functional theory (DFT) Si [64] has also shown that the reaction of several Ti and Zr precursors including tetrakis (dimethylamido)titanium (TDMAT), tetrakis(diethylamido)titanium (TDEAT), titanium tetramide (Ti(NH 2 ) 4 ), tetrakis(dimethylamido)zirconium (TDMAZ), and zirconium tetramide (Zr(NH 2 ) 4 ) has reactivity in the order OH > SH > NH 2 [67]. Dube et al investigated the growth mode of TiN ALD experimentally using TDMAT and NH 3 on SAMs with several different tail groups such as OH, NH 2 , and CH 3 , and found that the CH 3 -terminated surface much more effectively attenuated TiN growth than OH-and NH 2 -terminated surface, which was strongly dependent on the structure and thickness of SAMs possessing a CH 3 tail group [55,63].…”

mentioning

confidence: 99%

Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

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Atomic Layer Deposition on Soft Materials

Parsons

2011

Atomic Layer Deposition of Nanostructured Materials

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Effects of interfacial organic layers on thin film nucleation in atomic layer deposition

Cited by 24 publications

References 20 publications

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Nanopatterning by Area‐Selective Atomic Layer Deposition

Atomic Layer Deposition on Soft Materials

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