Microwave
dielectric ceramics exhibiting a low dielectric constant
(ε
r
), high quality
factor (Q × f), and thermal stability, specifically
in an ultrawide temperature range (from −40 to +120 °C),
have attracted much attention. In addition, the development of 5G
communication has caused an urgent demand for electronic devices,
such as dielectric resonant antennas. Hence, the feasibility of optimizing
the dielectric properties of the SmNbO4 (SN) ceramics by
substituting Bi3+ ions at the A site was studied. The permittivity
principally hinges on the contribution of Sm/Bi–O to phonon
absorption in the microwave range, while the reduced sintering temperature
results in a smaller grain size and slightly lower Q ×
f value. The expanded and distorted crystal cell indicates
that Bi3+ doping effectively regulates the temperature
coefficient of resonant frequency (TCF) by adjusting the strains (causing
the distorted monoclinic structure) of monoclinic fergusonite besides
correlating with the permittivity. Moreover, a larger A-site radius
facilitates the acquisition of near-zero TCF values. Notably, the
(Sm0.875Bi0.125)NbO4 (SB0.125N) ceramic with ε
r
≈ 21.9, Q × f ≈ 38 300
GHz (at ∼8.0 GHz), and two different near-zero TCF values of
−9.0 (from −40 to +60 °C) and −6.6 ppm/°C
(from +60 to +120 °C), respectively, were obtained in the microwave
band. A simultaneous increase in the phase transition temperature
(T
c) and coefficients of thermal expansion
(CTEs) by A-site substitution provides the possibility for promising
thermal barrier coating (TBC) materials. Then, a cylindrical dielectric
resonator antenna (CDRA) with a resonance at 4.86 GHz and bandwidth
of 870 MHz was fabricated by the SB0.125N specimen. The
exceptional performance shows that the SB0.125N material
is a possible candidate for the sub-6 GHz antenna owing to the advantages
of low loss and stable temperature.