2020
DOI: 10.3390/app10134554
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Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

Abstract: Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser… Show more

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Cited by 4 publications
(3 citation statements)
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“…In recent years, the laser‐doping selective emitter (LDSE) technique has been widely used in silicon solar cell fabrication because of its simple, low‐cost, and high‐throughput characteristics 10–12 . After laser doping, the phosohosilicate glass (PSG) layer in the doped region is usually damaged or thinned due to laser irradiation.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In recent years, the laser‐doping selective emitter (LDSE) technique has been widely used in silicon solar cell fabrication because of its simple, low‐cost, and high‐throughput characteristics 10–12 . After laser doping, the phosohosilicate glass (PSG) layer in the doped region is usually damaged or thinned due to laser irradiation.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9] In recent years, the laser-doping selective emitter (LDSE) technique has been widely used in silicon solar cell fabrication because of its simple, low-cost, and high-throughput characteristics. [10][11][12] After laser doping, the phosohosilicate glass (PSG) layer in the doped region is usually damaged or thinned due to laser irradiation. Referring to an existing approach to industrial monocrystalline silicon PERC solar cells with a selective emitter (mono-PERC-SE solar cells), after alkaline double-sided texturing-POCl 3 diffusion-laser doping process sequence, acidic (HF/HNO 3 ) wet chemical polishing by using an inline process partly removes the random pyramid texture on the rear side of the wafers.…”
Section: Introductionmentioning
confidence: 99%
“…
In recent years, local doping by laser irradiation has been a subject of intense study as a potential advancement in several applications of solar cells. Local phosphorus laser doping (LD) is not only used to form a selective emitter (SE) [1][2][3][4] but also the cost-effective local n-type doping of interdigitated back contact (IBC) cells. [5] To enhance cell performances, boron LD has found widespread applications across advanced solar cell structures, such as the SE for tunnel oxide passivated contact (Topcon) cells, [6] the local p-type doping of IBC cells, [5] and the localized back surface field (LBSF) in passivated emitter and locally doped solar cells.
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mentioning
confidence: 99%