Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7Al0.3As quantum ring

“…The effect of the ILF on the nonlinear optical properties of a square QW under the applied electric field were studied in [21]. In [22], based on the effective-mass approximation, the competition effects between the ILF and applied electric field on impurity states were investigated in the GaN/AlGaN QW. The combined effects of intense laser field and applied electric field on the nonlinear optical absorption and refractive index change in Ga 1−x Al x As/GaAS single QW [23] and Ga −x 1 In x N y As −y 1 /GaAs double QWs [24] were reported within the framework of the compact density matrix approach and iterative method.…”

Donor Binding Energy in GaAs/Ga 1− x Al x As Quantum Well: the Laser Field and Temperature Effects

“…Brandi et al [6−7] presented the theoretical study of the laser field effects on hydrogenic impurity states in semiconductor quantum structures. Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well (QW) were also studied by Xia et al [8] The effects of an intense laser field and hydrostatic pressure on the binding energy of shallow donor impurities in the QW was also investigated by Yesilgul et al [9] Ungan et al [10] also calculated the effects of an intense laser field on the bound impurity states in Ga 1−x In x N y As 1−y /GaAs double QWs. These researches show that the laser field effects on impurity states are obvious in low dimensional quantum structures.…”