Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Kang, Chang Seok; Choi, Jaehyuk; Sim, Jaesung; Lee, Changhyun; Shin, Youngmin; Park, Jintaek; Sel, Jongsun; Jeon, Sanghun; Park, Young-Woo; Kim, Kinam

doi:10.1109/relphy.2007.369887

Cited by 47 publications

(29 citation statements)

References 3 publications

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“…The higher the normalized values, the more the loss of the charge stored in the SiN layer increases. Several researchers have reported that the stored charge can spread via the charge-trapping layer and the retention performance of charge trap memories can be affected [16][17][18]. Accordingly, from the result of Fig.…”

Section: Resultsmentioning

confidence: 99%

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Kim¹,

Yang²,

Kim³

et al. 2015

Transactions on Electrical and Electronic Materials

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This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) siliconoxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

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Section: Resultsmentioning

confidence: 99%

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Kim¹,

Yang²,

Kim³

et al. 2015

Transactions on Electrical and Electronic Materials

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“…Published single-cell data ( Figure 36) suggest that a good intrinsic retention can be achieved, as expected from a floating-gate design [289]. The retention properties of charge-trap based planar devices have been extensively investigated as a function of temperature and bias [300], pointing out the roles of vertical charge loss through the tunnel oxide and lateral charge migration in the nitride [301][302][303][304], which also reduces the stored charge located above the channel region, that determines V T . In 3D devices, the importance of such effects is shown in Figure 37, where lateral diffusion along the nitride is modulated by the state of adjacent cells [305]: having all cells programmed decreases the concentration gradient, slowing down diffusion and reducing the V T shift.…”

Section: Retentionmentioning

confidence: 78%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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“…Besides, the SONOS top layer can efficiently stop the electrons, which allows to study the lateral electron redistribution without vertical charge loss. As already mentioned, this lateral redistribution could lower the memory reliability [7].…”

Section: Sonos Transistor Retention In Programmed Statementioning

confidence: 81%

“…Besides, edge effects in SANOS devices have been already mentioned in the literature [7]. These edge effects are considered as a potential problem and appropriate test structures have to be determined to study this mechanism.…”

Section: Sanos Transistor Retention In Programmed Statementioning

confidence: 99%

Physical understanding and modeling of SANOS retention in programmed state

Furnemont

Cacciato

Breuil

et al. 2008

Solid-State Electronics

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Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Cited by 47 publications

References 3 publications

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Physical understanding and modeling of SANOS retention in programmed state

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