Effects of lithographic parameters in massively parallel electron-beam systems

Moon, Soomin; Lee, Sang Yup; Choi, Jin; Kim, Seom-Beom; Jeon, Chan-Uk

doi:10.1116/1.5048084

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…A detailed discussion of the possible steps involved in the fabrication of the proposed plasmonic switches is included in supplementary note 1 (See supplementary data). For large-scale production, a variant of E Beam Lithography-Massively Parallel E-beam Lithography (MPEBL)-can be employed to fabricate the proposed switches on a large area [87][88][89]. In this system, a large number of parallel electron beams are generated through a 2-dimensional array of apertures, such that each beam writes a part of the overall pattern.…”

Section: Introductionmentioning

confidence: 99%

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO₂ coated plasmonic substrate

Dalal,

Sharma

2024

Nanotechnology

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In this paper, periodic arrays of identical V-shaped gold nanostructures and variable V-shaped gold nanostructures are designed on top of a gold-coated silicon dioxide (SiO2) substrate with a thin spacer layer of vanadium dioxide (VO2) to realize multi-wavelength and broadband plasmonic switches, respectively. The periodic array of identical V-shaped nanostructures (IVNSs) with small inter-particle separation leads to coupled interactions of the elementary plasmons of a V-shaped nanostructure (VNS), resulting in a hybridized plasmon response with two longitudinal plasmonic modes in the reflectance spectra of the proposed switches when the incident light is polarized in the x-direction. The x-direction is oriented along the axis that joins the V-junctions of all VNSs in one unit cell of the periodic array. On exposure to temperature, electric field, or optical stimulus, the VO2 layer transforms from its monoclinic semiconducting state to its rutile metallic state, leading to an overall change in the reflectance spectra obtained from the proposed nanostructures and resulting in an efficient multi-wavelength switching action. Finite difference time domain (FDTD) modelling is employed to demonstrate that an extinction ratio > 12 dB at two wavelengths can be achieved by employing the proposed switches by employing periodic arrays of identical V-shaped nanostructures. Further, plasmonic switches based on variable V-shaped nanostructures (VVNSs) — i.e., multiple VNSs with variable arm lengths in one unit cell of a periodic array — are proposed for broadband switching. In the broadband operation mode, we report an extinction ratio > 5 dB over an operational wavelength range > 1400 nm in the near-IR spectral range spanning over all optical communication bands, i.e., the O, E, S, C, L and U bands. Further, it is also demonstrated that the wavelength of operation for these switches can be tuned by varying the geometrical parameters of the proposed switches. These switches have the potential to be employed in communication networks where ultrasmall and ultrafast switches with multi-wavelength operation or switching over a wide operational bandwidth are inevitably required.

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Section: Introductionmentioning

confidence: 99%

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO₂ coated plasmonic substrate

Dalal,

Sharma

2024

Nanotechnology

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Effects of abnormal beams on writing qualities in massively-parallel e-beam systems

Hasan

Lee

Ahn

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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While electron-beam (e-beam) lithography is widely used in transferring fine-feature patterns onto a substrate, its major drawback is the low throughput, especially for large-scale patterns. To increase the writing throughput, e-beam machines with massively-parallel beams were recently developed. In such a system, it is highly likely that some beams may not be normal, e.g., permanently on or off, a significant current fluctuation, beam-positioning error, etc. Therefore, it is crucial to understand how abnormal beams affect writing qualities. In this study, the effects of abnormal beams on the writing qualities are analyzed through an extensive simulation, comparing three different writing methods, single-row writing I, single-row writing II, and multirow writing, to suggest ways of reducing their negative effects.

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Effects of lithographic parameters in massively parallel electron-beam systems

Cited by 2 publications

References 11 publications

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO₂ coated plasmonic substrate

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO₂ coated plasmonic substrate

Effects of abnormal beams on writing qualities in massively-parallel e-beam systems

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Effects of lithographic parameters in massively parallel electron-beam systems

Cited by 2 publications

References 11 publications

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO2 coated plasmonic substrate

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO2 coated plasmonic substrate

Effects of abnormal beams on writing qualities in massively-parallel e-beam systems

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Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO₂ coated plasmonic substrate

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO₂ coated plasmonic substrate