Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures

Kwon, Dae Woong; Kim, Hyun Woo; Kim, Jang Hyun; Park, Euyhwan; Lee, Junil; Kim, Wandong; Kim, Sangwan; Lee, Jong-Ho; Park, Byung‐Gook

doi:10.1109/ted.2017.2669365

Cited by 26 publications

(16 citation statements)

References 12 publications

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“…Fig. 9 shows that the extracted experimental data from reference [21] bear close proximity to calibrated transfer characteristics obtained by simulation of the structure with same dimension as of Ref. [21] justifying the validation of our simulation setup.…”

Section: Resultssupporting

confidence: 66%

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Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

Dash

Saha

Sarkar

2019

IET Circuits, Devices & Systems

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In this endeavour, the fruition of a resurrected tunnel field effect transistor has been investigated incorporating the idea of strained channel engineering along with the implementation of dielectric modulation technique. A non-homogeneous pattern of gate oxide layer is considered with hetero-dielectric architecture at the front gate and linearly graded oxide at the back gate. The buried oxide (BOX) thickness is kept intentionally double that of front oxide one to reduce electric field lines penetrating from drain to source, thus minimising fringing field effect. The surface potential function has been deduced with the help of 2D Poisson's equation assuming appropriate boundary conditions. Lateral electric field and hence total electric field have been computed from channel potential to study tunnelling efficiency, hot carrier effect and drain induced barrier lowering for the aimed device. Finally drain current has been derived with the help of Kane's model upon integration of band-to-band tunnelling rate and the results have been compared with previously published reports to corroborate the eminence of the proposed model. All analytical corollaries are in adroit amity with Silvaco ATLAS simulated data for avowal of the developed modelin terms of sublime short channel behaviour.

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Section: Resultssupporting

confidence: 66%

“…Similarly, for other specified regions, we have Parameter values reported here were calibrated against experimental Si-Ge TFETs [21]. Now, drain current has been derived upon double integration of G in the physical channel region, i.e.…”

Section: Electric Field Expressionmentioning

confidence: 99%

Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

Dash

Saha

Sarkar

2019

IET Circuits, Devices & Systems

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“…The nonlocal BTBT model is applied for investigation of ambipolar current in L-shaped TFET since this model takes tunneling effect into consideration based on energy band profile. Two tunneling model coefficients A Si = 4.0 × 10 14 cm −1 s −1 , B Si = 9.9 × 10 6 V/cm, A SiGe = 3.1 × 10 16 cm −1 s −1 and B SiGe = 7.1 × 10 5 V/cm from [16] are used in this work.…”

Section: Device Structures and Simulation Methodsmentioning

confidence: 99%

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor

Kim

Ryu

et al. 2019

Micromachines

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L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar current. In this paper, a stacked gate L-shaped TFET is proposed for suppression of ambipolar current. Stacked gates can be easily implemented using the structural features of L-shaped TFET, and on- and off-current can be controlled separately by using different gates located near the source and the drain, respectively. As a result, the suppression of ambipolarity is observed with respect to work function difference between two gates by simulation of the band-to-band tunneling generation. Furthermore, the proposed device suppresses ambipolar current better than existing ambipolar current suppression methods. In particular, low drain resistance is achieved as there is no need to reduce drain doping, which leads to a 7% enhanced on-current. Finally, we present the fabrication method for a stacked gate L-shaped TFET.

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“…The characteristics of the L-shaped TFET is simulated by the Synopsys Sentaurus TM . The Shockley-Read-Hall (SRH) and dynamic nonlocal BTBT model are used for accurate characteristics [23,24]. The dynamic nonlocal BTBT model is essential to examine lateral-and vertical-BTBT in the L-shaped TFET, since it can dynamically determine and calculate all tunneling paths based on the energy band profile [3,[25][26][27].…”

Section: Device Structurementioning

confidence: 99%

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Kim

Song

et al. 2020

Micromachines

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In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves. The first one is the on-state current (ION) variation, the second one is the hump current (IHUMP) variation, and the last one is ambipolar current (IAMB) variation. According to the simulation results, the ION variation is sensitive depending on the size of the tunneling region and could be reduced by increasing the tunneling region. However, the IHUMP and IAMB variations are relatively irrelevant to the size of the tunneling region. In order to analyze the cause of this difference, we investigated the band-to-band tunneling (BTBT) rate according to WFV cases. The results show that when ION is formed in L-shaped TFET, the BTBT rate relies on the WFV in the whole region of the gate because the tunnel barrier is formed in the entire area where the source and the gate meet. On the other hand, when the IHUMP and IAMB are formed in L-shaped TFET, the BTBT rate relies on the WFV in the edge of the gate.

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Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures

Cited by 26 publications

References 12 publications

Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

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