Effects of low-temperature annealing on polycrystalline silicon for solar cells

Slunjski, Robert; Capan, Ivana; Pivac, Branko; Donne, A. Le; Binetti, S.

doi:10.1016/j.solmat.2010.09.016

Cited by 8 publications

(4 citation statements)

References 34 publications

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“…Although relatively high in efficiency, they suffer from high manufacturing and installation costs. 37-40 (ii) The second generation of thin-film solar cells, e.g., amorphous silicon, 41,42 poly-crystalline silicon, 43,44 cadmium telluride, 45,46 and copper indium gallium selenide. 47,48 These solar cells are significantly less expensive than single-crystalline PV cells due to reduced materials and processing costs, and increased manufacturing throughput.…”

Section: A3 Current Challenges In Photovoltaicsmentioning

confidence: 99%

Nanochemistry and nanomaterials for photovoltaics

et al. 2013

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Nanochemistry and nanomaterials provide numerous opportunities for a new generation of photovoltaics with high solar energy conversion efficiencies at low fabrication cost. Quantum-confined nanomaterials and polymer-inorganic nanocomposites can be tailored to harvest sun light over a broad range of the spectrum, while plasmonic structures offer effective ways to reduce the thickness of light-absorbing layers. Multiple exciton generation, singlet exciton fission, photon down-conversion, and photon up-conversion realized in nanostructures, create significant interest for harvesting underutilized ultraviolet and currently unutilized infrared photons. Nanochemical interface engineering of nanoparticle surfaces and junction-interfaces enable enhanced charge separation and collection. In this review, we survey these recent advances employed to introduce new concepts for improving the solar energy conversion efficiency, and reduce the device fabrication cost in photovoltaic technologies. The review concludes with a summary of contributions already made by nanochemistry. It then describes the challenges and opportunities in photovoltaics where the chemical community can play a vital role.

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Section: A3 Current Challenges In Photovoltaicsmentioning

confidence: 99%

Nanochemistry and nanomaterials for photovoltaics

et al. 2013

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“…The polycrystalline and single-crystal devices had an estimated trap state density of ∼10 9 to 10 10 cm –3 . The trap densities calculated for our samples are lower than other PV absorber materials such as polycrystalline-Si (10 13 –10 14 cm –3 ), , CdTe (10 11 –10 13 cm –3 ), CIGS (10 13 cm –3 ), rubrene (10 16 cm –3 ), and pentacene (10 14 to 10 15 cm –3 ) …”

Section: Resultsmentioning

confidence: 53%

“…The polycrystalline and single-crystal devices had an estimated trap state density of ∼10 9 to 10 10 cm −3 . The trap densities calculated for our samples are lower than other PV absorber materials such as polycrystalline-Si (10 13 − 10 14 cm −3 ), 47,48 CdTe (10 11 −10 13 cm −3 ), 49 CIGS (10 13 cm −3 ), rubrene (10 16 cm −3 ), 50 and pentacene (10 14 to 10 15 cm −3 ). 51 The carrier mobility (μ n ) of the devices was determined from the values of current density J D and applied voltage V at the start of the high bias (Child's) region, shown in Figures 13, S9, and S10, where the approximately quadratic (n = 2) dependence obeys the Mott−Gurney (M-G) law.…”

Section: Dark I−v Study Using Space Charge Limited Current (Sclc)mentioning

confidence: 54%

Effect of Trap States, Ion Migration, and Interfaces on Carrier Transport in Single-Crystal, Polycrystalline, and Thick Film Devices of Halide Perovskites CH₃NH₃PbX₃ (X = I, Br, Cl)

Warish,

Jamwal,

Aftab

et al. 2023

ACS Appl. Electron. Mater.

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The understanding of the mixed ionic–electronic nature of charge transport in metal halide perovskites (MHPs) and the role of morphological and interface defects is crucial for improving the performance of MHP-based photovoltaic devices. We present the results of a parallel study on MAPbX3 (X = I, Br, Cl), synthesized as solution-processed polycrystalline powders and as single crystals grown by a facile low-temperature-assisted technique. We have studied ionic–electronic charge transport in single-crystal and polycrystalline (pressed pellet and thick film) samples in order to compare the effect of defects and trap states associated with halide ion migration, device morphology, and interfaces at grain boundaries as well as at electrodes. The mobility of halide ions and associated Coulomb capture of electrons/holes was determined by dielectric and space charge limited current (SCLC) dark I–V measurements and also simulated using an ionic–electronic model. The defect capture cross section of electronic charge was found to be proportional to the simulated halide ion density N ion, which varied in the range of 1016–1022 cm–3 depending on the halide ion. The trap state density from I–V measurements, N trap ∼ 109 to 1010 cm–3, was found to be lower than those of previous reports. Single-crystal MAPbI3 devices exhibited a low capture cross section (σ– ∼ 10–16 cm–2), high mobility (μ ∼ 196 cm2/V-s), and large diffusion length (L D ∼ 6 μm). The study shows that nonradiative energy loss and carrier trapping are suppressed and transport properties are enhanced by reducing grain boundary effects, along with interface engineering to prevent halide ion accumulation at the electrodes.

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“…The LBIC mapping technique at different wavelengths together with DLTS enabled researchers to recognize and detect these arrays and to evaluate their recombination strength [84]. A comparison of various techniques may provide precise information about dislocation behaviors [85]. The use of direct-current, continuous-operation, glow discharge mass spectrometry (GDMS) has become an established technique for multi-element investigation of trace-and ultra-trace impurities in highly pure metals and semiconductors [86].…”

Section: Indirect Diagnosis Of Dislocationsmentioning

confidence: 99%