Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films

Tseng, Wei–Tsu; Liu, Chi-Wen; Dai, Bau–Tong; Yeh, Ching-Fa

doi:10.1016/s0040-6090(96)09020-7

Cited by 28 publications

(17 citation statements)

References 9 publications

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“…Material removal rate in polishing is described by several models developed since the model of Preston [1][2][3][4] such as the models of Brown, Warnock, Cook, Wang, Yu, Lin, and others [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. A very fine surface quality can be obtained by the polishing process; it depends on the process parameters and their relative phenomena.…”

Section: Introductionmentioning

confidence: 99%

Determination of the Friction Coefficient During Glass Polishing

2008

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In this paper, the friction coefficient was measured using a computer-controlled electrical system. The obtained results of the friction behavior during the polishing process indicate that the friction coefficient increases in the first minutes of polishing and then tends to be stable. The effect of some polishing parameters such as velocity and polishing pad nature was studied. It was found that these parameters have an important influence on the friction behavior. Indeed, it was found that the increase of the velocity reduces the friction coefficient. However, the nature of the polishing pads produces enormous variation of the friction coefficient.

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Section: Introductionmentioning

confidence: 99%

Determination of the Friction Coefficient During Glass Polishing

2008

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“…For comparison, the removal rate estimated based on other existing models were also shown in the figure. These models included Preston's equation [2], Tseng's model [10], Wu's model [13], and Tsai's model [14]. It is seen that the proposed model can more accurately estimate the removal rate.…”

Section: Resultsmentioning

confidence: 99%

“…Wang et al [9] studied the stress distribution across a wafer. Tseng et al [10] studied the effects of as-deposited stress, externally applied stress, hardness, and modulus of various dielectric films on chemical-mechanical polishing removal and post-CMP cleaning process. Liu et al [11] developed a model based on a statistical method and elastic theory to describe the wear mechanism of the silicon wafer surface during chemical-mechanical polishing.…”

Section: Introductionmentioning

confidence: 99%

A material removal model for polishing glass–ceramic and aluminum magnesium storage disks

Wang

Lin

Hochen

2002

International Journal of Machine Tools and Manufacture

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In this paper, a model is proposed to more closely describe the relationships between polishing parameters and the material removal rate for the commonly used storage disks in PC. Experiments were conducted to verify this model. It is shown that the proposed model predicts the material removal rate more accurately than existing models. The proposed model is expected to apply to different materials polished by similar processes. The FEM analysis of the applied polishing pressure well explained the current empirical results. 

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“…where RR is the removal rate, K p is a constant, called Preston's coefficient, P is the local pressure on the surface, and V is the relative velocity of the point on the surface of the wafer versus the pad [7][8][9][10][11][12]. The equation works well for systems where material was removed mainly by abrasion.…”

Section: Description Of the Cmp Processmentioning

confidence: 99%

Processing Tools for Manufacturing

Tsujimura

2007

Microelectronic Applications of Chemical Mechanical Planarization

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In today's wafer fabrication plant, chemical-mechanical polishing or planarization (CMP) is an integral part of the manufacturing flow ( Fig. 3.1) [1]. Rotary polishing platforms were the initial polishing machines on which the semiconductor CMP processes were developed. A majority of the polishers used in industry and academic institutions today are rotary tools, even though other polishing platforms have been implemented. A typical schematic illustration of the rotary polishing platform used is shown in Fig. 3.2 [2]. The basic operating principle behind the rotary platform is that the wafer is held on a rotating carrier while being pressed face down against a rotating polishing pad, while a chemically and mechanically (abrasive) active slurry planarizes the wafer.Typically, both the wafer carrier and platen are rotated in the same direction. A downforce is applied while the wafer carrier and platen are rotated on their own axes v c and v p , respectively. The polishing slurry is dispensed from a tube located at the center of the pad, and as the platen rotates the slurry is transported between the wafer and the pad [3][4][5][6]. In addition to the rotary platform, an orbital design has also been implemented (Fig. 3.3) [2]. The operating principle for the orbital design is similar to the rotary platform, except that the polishing head and table are in orbital motion to each other. In addition, the slurry is usually delivered through the pad.

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Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films

Cited by 28 publications

References 9 publications

Determination of the Friction Coefficient During Glass Polishing

Determination of the Friction Coefficient During Glass Polishing

A material removal model for polishing glass–ceramic and aluminum magnesium storage disks

Processing Tools for Manufacturing

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