Effects of mercury and nickel impurities on optical properties of copper sulfide (CuS) thin films deposited by chemical bath technique.

Abstract

Thin films of copper sulfide (CuS) with varying concentrations of mercury (Hg) and nickel (Ni) impurities (0.01M-0.03M) were grown on glass substrates at room temperature (300K) using chemical bath deposition technique. Spectral transmittance and reflectance of the thin films were measured with a spectrophotometer in the UV-Vis-IR region of the electromagnetic spectrum. The effects of the impurities on other optical spectra obtained theoretically were quantitatively evaluated from the spectrophotometer data. The energy band gap increased for all Hg impurity concentrations to a maximum of 3.25 eV for 0.02M Hg impurity as against 2.65 eV for as grown CuS thin film, while the band gap decreased for all Ni impurity concentrations to a minimum of 1.85 eV for O.01M Ni impurity. The absorbance increased with both Hg and Ni impurity concentrations while the transmittance decreased with Ni impurities and increased with Hg impurities. The results also show increase in absorption coefficient and decrease in reflectance for both Hg and Ni impurities with a maximum reflectance of 70% for as grown thin film down to 10% wlth 0.01 Ni impurity. Values for the refractive index reduced to 1.0 with 0.01M of both impurities from a maximum of 2.4 for as grown CuS thin film. Also, results of the absorbance, transmittance and reflectance as presented here converged at 300 nm and diverged to 900 nm wavelength limit.

Dual solution synthesis of Al doped CuS thin films for optoelectronic and photovoltaic applications

“…Copper sulfide is a p-type semiconducting material which belongs to I-VI compound semiconductor metals. Chalcogenide thin films of copper sulfide have received particular attention since the discovery of the CdS/CuS heterojunction solar cell in 1954 (Osuwa and Mgbaja, 2013). Other applications of CuS thin films include laminated glazing, photo-thermal conversion, electro-conductive electrode, microwave shielding and solar control coatings (Grozdanov and Najdoski, 1995); Ottih and Ekpunobi, 2010)It is also used in photo-detectors and photovoltaic applications.…”

Analysis of Structural and Electrical Properties of Iron Sulfide (FeS2)Thin Films doped with Aluminum and Strontium impurities

“…As with many other thin films, the benefits accruable from FeS 2 thin films can also be enhanced by varying the deposition techniques, deposition time, annealing temperature, pH concentration, complexing agent etc. [5][6][7][8] The effects of these lead to different optical, structural and electrical properties of the thin films [9][10][11] making them amenable to more applications.…”

Structural and Electrical Properties of Copper Sulfide (CuS) Thin Films doped with Mercury and Nickel impurities

“…Chalcogenide thin films of copper sulfide have received particular attention since the discovery of the CdS/CuS hetrojunction solar cell in 1954 [1]. Other applications of CuS thin films include laminated glazing, photo-thermal conversion, electro-conductive electrode, microwave shielding and solar control coatings [2][3][4][5][6].…”