Effects of metal content on electrical and physical properties in solution-processed IGZO thin films

Morimoto, Takaaki; Yang, Yicheng; Ochiai, Yusuke; Fukuda, Nobuko; Ohki, Yoshimichi

doi:10.1007/s00339-020-03579-2

Cited by 5 publications

(2 citation statements)

References 47 publications

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“…Therefore, the IGZO TFTs fabricated on a flexible substrate cannot be subjected to temperatures higher than 400 • C during the annealing process. Thus, the reduction of the annealing process temperature to less than 400 • C is critical for applications in flexible and wearable devices [15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Liu

Hsu

Jiang

et al. 2021

Semicond. Sci. Technol.

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In this study, an Ar/O2 plasma mixture treatment with different proportions of O2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm2 V−1 s−1, a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10−11 A, and an I ON/I OFF current ratio of 7.55 × 105. To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm2 V−1 s−1, SS of 0.7 V/decade, I OFF current of 1.04 × 10−11 A, and an I ON/I OFF current ratio of 9.93 × 106. In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

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Section: Introductionmentioning

confidence: 99%

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Liu

Hsu

Jiang

et al. 2021

Semicond. Sci. Technol.

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show abstract

“…Additionally, carrier concentration within these films was measured using hall effect measurements, showing consistency with the XPS results. Morimoto et al 217 investigated the effect of metal composition on the properties of IGZO films and their corresponding TFTs. Their study confirmed that varying the ratios of In, Ga, and Zn in IGZO films alters the quantity of oxygen vacancies.…”

Section: Semiconductor Tftsmentioning

confidence: 99%

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

Choi,

Lim,

Shin

et al. 2024

Chem. Mater.

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Dynamic random-access memory (DRAM) devices are essential volatile memory components in most digital devices. With the increasing demand for further low-power and high-density devices, the planar structure of DRAM devices encountered a "memory wall", ushering in an era of 3D DRAM architecture. InGaZnO-based thin-film transistors (IGZO TFTs) have a very low off current (<10 −22 A/μm), representing a solution for new channel materials for next-generation 3D DRAM devices. IGZO TFTs are back-end-of-line (BEOL)compatible, enabling them to move the DRAM peripheral circuitry under the memory array and integrate stacked DRAM cells. IGZO thin films have been widely studied for next-generation flat panel display applications. However, most studies have employed sputtering and solution-based systems, which hinder process compatibility in 3D DRAM devices with complex structures. Atomic layer deposition (ALD) is a viable alternative for solving these challenges. In this paper, we comprehensively review the reported Zn-, In-, Sn-, and Ga-based oxide semiconductors in terms of the ALD process (precursors, reactants, growth temperature, etc.), together with material properties such as purity, crystallinity, and electrical properties.

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Effect of ozone gas exposure on drain current of solution-processed IGZO-TFT

Sasajima,

Morimoto,

Fukuda

et al. 2024

Appl. Phys. A

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The drain current (ID) of indium gallium zinc oxide thin-film transistors (IGZO-TFTs), fabricated by spin coating, decreases even when they are exposed to ozone gas at a concentration equal to or lower than 5 ppm. The ID reduction rate increases when the film thickness and the firing temperature in the spin-coating process of IGZO layer decreases. In these samples, the peak intensity ratio of the O 1s X-ray photoelectron spectroscopy (XPS) peak due to the OH group and the intensity of the infrared (IR) absorption band at 3000 cm−1–3500 cm−1 due to the OH stretching vibration increase. This indicates that OH groups within the IGZO film contribute to the ozone reaction mechanism. These findings are significant for developing high-sensitivity ozone sensors using a simpler process.

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Effects of metal content on electrical and physical properties in solution-processed IGZO thin films

Cited by 5 publications

References 47 publications

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

Effect of ozone gas exposure on drain current of solution-processed IGZO-TFT

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