Effects of metal properties on MIS/IL silicon solar cells

Abstract

Inversion layer silicon solar cells are described, They employ the natural inversion layer occuning at the surface of thermally oxidized p-type silicon as one side of an inducedn-p junction. A computer analysis of induced inversion layer MIS silicon solar cell is described. The analysis simultaneously solves transport equations of the device in one dimension and provided thecurrent components. Taking into consideration all the cell parameters has yield more accurate values for cell performance. The study of the performance of the MIS/IL solar cells is based on the concept that there are minority carrier non-equilibrwn devices. In this paper, we discuss the effects of metal properties, namely, electron negativity and metal work fkction on cell characteristics. The model is used to obtain the optimum metal properties for high efficiency MIS/IL solar cells.

Optimization of Mis/Il Solar Cells Parameters Using Genetic Algorithm

“…Genetic algorithm has been used to optimize the MIS/IL solar cell parameters by changing the device physical parameters namely, doping concentration NA, oxide thickness d", metal work function external back bias on the inversion grid V, mobile charge density N," and fixed oxide charge density Nf [12]. Binary encoding scheme is used in this algorithm to encode the MIS/IL solar cell parameter [13][14].…”