Effects of Mg doping content and annealing temperature on the structural properties of Zn1-x Mg x O thin films prepared by radio-frequency magnetron sputtering

Du, Weijie; Yang, Jingjing; Zhao, Yu; Xiong, Chao

doi:10.1007/s11801-017-6204-9

Optoelectron. Lett.

2017

DOI: 10.1007/s11801-017-6204-9

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Effects of Mg doping content and annealing temperature on the structural properties of Zn1-x Mg x O thin films prepared by radio-frequency magnetron sputtering

Weijie Du

Jingjing Yang

Yu Zhao

et al.

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“…2. Experiment: ITO and ZnS thin films were deposited by the magnetron sputtering technique [25]. Both sputtering targets were hot-pressed ceramics, and quartz glasses were used as the substrates.…”

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Preparation of ZnS by magnetron sputtering and its buffer effect on the preferential orientation growth of ITO thin film

Yang

Zhao

et al. 2018

Micro & Nano Letters

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Two different deposition sequences were carried to investigate ZnS and indium-tin oxide (ITO) multiple thin films on quartz substrates using magnetron sputtering technique. In the deposition order of ITO on ZnS layer, ZnS acts as a buffer layer with a thickness of at least 10 nm, and ITO thin film has (222) preferential orientation growth. Besides, lattice constant expansion phenomenon was observed when the film thickness of ITO was increased, indicating tension stress increase in ITO film. The lattice constant mismatch of 5% is the reason for the preferential orientation growth between ZnS and ITO thin films. In the other deposition sequence of ZnS on ITO layer, ZnS thin film has (111) preferential orientation growth. While ITO was kept in multiple crystalline properties. Pinhole-free ZnS thin film was observed by scanning electron microscopy for this deposition sequential, promising well interface in the thin film solar cells with lower interface defects.

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mentioning

confidence: 99%

Preparation of ZnS by magnetron sputtering and its buffer effect on the preferential orientation growth of ITO thin film

Yang

Zhao

et al. 2018

Micro & Nano Letters

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Effects of Mg doping content and annealing temperature on the structural properties of Zn1-x Mg x O thin films prepared by radio-frequency magnetron sputtering

Cited by 1 publication

References 14 publications

Preparation of ZnS by magnetron sputtering and its buffer effect on the preferential orientation growth of ITO thin film

Preparation of ZnS by magnetron sputtering and its buffer effect on the preferential orientation growth of ITO thin film

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