Effects of Mg doping to optimize properties ZnO:Al for the transparent conductive oxide (TCO)

Park, Sang Min; Gu, Gang Hee; Park, C. G.

doi:10.1002/pssa.201127003

Cited by 18 publications

(10 citation statements)

References 9 publications

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“…All XPS spectra were calibrated by the C 1s peak (284.6 eV) to compensate the charge effect. The addition of Mg to ZnO can either replace Zn 2+ or form MgO secondary phase [28]. In the case of pure ZnO, the Zn 2p 3/2 XPS peak appeared at 1022.03 eV represents the formation of Zn-O bonds while in case of MgZnO films, the Zn 2p 3/2 peak shifted towards higher binding energies, which results from the replacement of Zn 2+ by Mg 2+ and an added Zn-O-Mg binding energy.…”

Section: Resultsmentioning

confidence: 84%

Bias-dependent photo-detection of dual-ion beam sputtered MgZnO thin films

Pandey

Mukherjee

2016

Bull Mater Sci

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The structural, morphological, elemental and electrical properties of MgZnO thin films, grown on p-Si (001) substrates by dual-ion beam sputtering deposition (DIBSD) system at different substrate temperatures were thoroughly investigated. X-ray diffraction (XRD) pattern of MgZnO film exhibited crystalline hexagonal wurtzite structure with the preferred (002) crystal orientation. The full-width at half-maximum of the (002) plane was the narrowest with a value of 0.226 • from MgZnO film grown at 400 • C. X-ray photoelectron spectroscopy analysis confirmed the substitution of Zn 2+ by Mg 2+ in MgZnO thin films and the absence of MgO phase. Correlation between calculated crystallite size, as evaluated from XRD measurements, and room-temperature carrier mobility, as obtained from Hall measurements, was established. Current-voltage characteristics of MgZnO thin films were carried out under the influence of dark and light illumination conditions and corresponding values of photosensitivity were calculated. MgZnO film grown at 100 • C exhibited the highest photosensitivity of 1.62. Compared with one of the best-reported values of photosensitivity factor from ZnO-material-based films available in the literature, briefly, ∼3.085-fold improved photosensitivity factor at the same bias voltage (2 V) was obtained.

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Section: Resultsmentioning

confidence: 84%

Bias-dependent photo-detection of dual-ion beam sputtered MgZnO thin films

Pandey

Mukherjee

2016

Bull Mater Sci

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“…For higher concentrations, the resistivity follows an almost linear variation. In this case, the resistivity is affected by oxygen vacancies and the presence of Mg atoms in interstitial sites (Park et al, 2011). Carrier density and mobility diminished as Mg concentration increased, as seen in Fig.…”

Section: Resultsmentioning

confidence: 91%

Structural Analysis of ZnO(:Al,Mg) Thin Films by X-ray Diffraction

Garcés

Budini

Koropecki

et al. 2015

Procedia Materials Science

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“…The micro-strain value exhibited maximum magnitude as 1.194 × 10 −3 for Mg = 2% due to the reduced size. The diminution in size by Mg addition at 2% is supported by the substitution of Mg 2+ (ionic radius ~ 0.57 Å) instead of Zn 2+ (ionic radius ~ 0.60 Å) which reduces the volume [21].…”

Section: Xrd-structural Studiesmentioning

confidence: 99%

Fine-tuning of energy gap, FTIR, photoluminescence and photocatalytic behavior of Centella asiatica extract mediated Mn/Mg doped ZnO nanostructure

Subbiah

Muthukumaran²,

Raja³

2019

J Mater Sci: Mater Electron

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Mn, Mg two element doped ZnO nanostructure derived from Centella asiatica leaf extract with Mn = 2% and Mg = 0, 2 and 4% were prepared by bio-synthesis method. Hexagonal structure of ZnO was maintained throughout the Mn/Mg doping without any additional phase. The derived XRD intensity ratio ((I 100 /I 002 ) was almost equal to one for Mg = 2% than other samples which signifies the tuning of size and shape towards the spherical size which was confirmed by electron microscopic images. The higher absorbance in UV and visible wavelengths at Mg = 4% is used to improve the light harvesting capacity and should increase the photocatalytic activity of composite samples. The tuning of energy gap by Mg doping is useful for the fabrication of opto-electronic devices. The presence of Zn-O-Mn/Mg local bond is confirmed by Fourier transform infra-red studies. The existing strong ultra-violet emission band and the visible blue and green emission bands were discussed based on electronic transition and intensity of defect centers. The elevated photocatalytic activity at Mg = 4% is due to the reduced energy gap (3.89 eV) than other samples and hence the higher absorption in the visible region and the creation of defect states.

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Effects of Mg doping to optimize properties ZnO:Al for the transparent conductive oxide (TCO)

Cited by 18 publications

References 9 publications

Bias-dependent photo-detection of dual-ion beam sputtered MgZnO thin films

Bias-dependent photo-detection of dual-ion beam sputtered MgZnO thin films

Structural Analysis of ZnO(:Al,Mg) Thin Films by X-ray Diffraction

Fine-tuning of energy gap, FTIR, photoluminescence and photocatalytic behavior of Centella asiatica extract mediated Mn/Mg doped ZnO nanostructure

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