Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions

Movpe Studies of Zincblende Gan on 3c-Sic/Si(001)

“…Furthermore, the smaller bandgap of zb-GaN (3.27 eV) compared to that of wz-GaN (3.47 eV) allows for a smaller amount of Indium in the quantum wells, which would be especially advantageous in green-emitting devices. Other device-related properties of zb-GaN such as n-and p-type doping concentrations and carrier mobilities using Si and Mg as dopants, respectively, are largely in line with those reported for wurtzite-type material [17][18][19][20][21][22], although several recent Mg doping studies of zb-GaN [23][24][25] reported free hole concentration as high as 6 × 10 19 cm − 3 . Successful n-and p-type doping of zb-GaN was demonstrated by electroluminescence from p-n homojunctions [23,[26][27][28] and GaN/InGaN heterostructures [29].…”

Study of the heavily p-type doping of cubic GaN with Mg

“…Hall effect mobility as a function of free hole carrier concentration. Our samples are represented by circles and are complemented with previously reported results for Mg-doped c-GaN19,21,[23][24][25] . https://doi.org/10.1038/s41598-020-73872-w…”

“…Despite these early studies have been done almost three decades ago, the mentioned metastability nature of c-GaN and the Mg doping drawbacks have caused disperse and limited information on the electrical properties of Mg-doped cubic GaN [19][20][21][22][23][24] . Recently the authors in reference 25 reported a free hole concentration in the order of 10 19 cm −3 in c-GaN. No subsequent study could be found where hole concentration is in the order of 10 19 cm −3 or larger.…”