Objectives: To study gamma ray irradiation effect on dielectric and AC conductivity of V 2 O 5 doped bismuth borate glasses designed with the compositions 50B 2 O 3 -(50-X)Bi 2 O 3 -XV 2 O 5 where, X = 0, 0.2, 0.4, 0.6, 0.8, 1.0 and establishing the conduction mechanism. Methods: Glasses were synthesized by traditional melt quenching technique at 1323K. The prepared samples were subjected to annealing at 623K, which helps to remove strain in the samples. Absence of crystalline phases in the samples was confirmed by X-ray diffraction studies. An independent measurement of dielectric constant, dielectric loss and AC conductivity was carried out for temperature range from 300Kto 493K by impedance analyzer. Findings: The physical properties of glass were achieved by studying the density and the molar volume. Dielectric constant (ε') and dielectric loss (ε") were measured as a function of temperatures in the range from 300K to 493K, over the frequencies 10 2 Hz -10 6 Hz before and after gamma ray irradiation. AC conductivity (σ AC ) of the glasses was measured as a function of frequency for different temperatures before and after gamma ray irradiation. Novelty: For the first time, it was attempted that the effect of gamma ray irradiation on dielectric and AC conductivity properties of bismuth-borate glasses doped with vanadium oxide has been investigated. Here we have observed the change in the variation of dielectric constant, dielectric loss and AC conductivity with frequency and temperature before and after gamma ray irradiation. The borate network becomes more compact after being exposed to gamma rays, and the energy band gap may even narrow. Furthermore, it has been found that the composition of the glass influences how radiation impacts conductivity.