Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films

Abstract

We firstly achieved significant regulation of the colossal electroresistance (CER) by ion doping in PbPdO2 thin films. Combined with DFT calculation, we elucidate the underlying mechanism of its influence.

Effects of V and Gd doping on novel positive colossal electroresistance and quantum transport in PbPdO2 thin films with (002) preferred orientation

“…9(a)–(c) show the magnetoconductivity (MC) curves of the all films at T = 2, 4, 6, 8 and 10 K. We are concerned with the MC curve in the low magnetic field range because quantum transport mainly occurs in the low magnetic field. 9,55,56 Under low magnetic field conditions, negative cusp MC appears in the temperature range from 2 K to 10 K in the PbPdO 2 thin film, which is a typical feature of the WAL effect. Under the condition of a low magnetic field, the PbPd 0.9 V 0.1 O 2 thin film also presents a negative cusp MC between 2 K and 4 K. However, at T > 4 K, the MC presents a shape positive cusp, which is characteristic of the WL effect.…”

“…This indicates that there is a temperature-related cross between the WAL and WL in PbPd 0.9 V 0.1 O 2 and PbPd 0.9 Gd 0.1 O 2 thin films. In addition, the data can be analyzed using the Hikami−Larkin−Nagaoka (HLN) formula as follows: 9,55–57 where Ψ and l ϕ are the digamma function and phase coherence length, and α is a coefficient indicating the type of localization. The type of localization is determined by the sign of the α -value.…”