Effects of Mn Ion Implantation on XPS Spectroscopy 
of GaN Thin Films

Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud‐Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jun

doi:10.1007/s11664-017-5955-1

Cited by 18 publications

(3 citation statements)

References 25 publications

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“…The N-1s peak shifts towards a lower BE by 0.4 eV to the position of 396.1 eV after the Mn atoms' introduction. Hence, the shifts of Ga-3d and N-1s are the same; a similar observation was also noted in another paper [93], where Mn implantation by an ion bombardment was applied.…”

Section: Mn On Gan(0001)supporting

confidence: 85%

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Grodzicki

2021

Coatings

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

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Section: Mn On Gan(0001)supporting

confidence: 85%

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Grodzicki

2021

Coatings

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“…The N-1s peak shifts towards a lower BE by 0.4 eV to the position of 396.1 eV after the Mn atoms introduction. So, the shifts of the Ga-3d and N-1s are the same, and a similar observation was also noted in another paper [93], where the Mn implantation by an ion bombardment was applied. The presence of Mn atoms in p-GaN has a strong impact on the VB and the effects are especially visible nearby the Fermi level.…”

Section: Mn On Gan(0001)supporting

confidence: 83%

Properties of Thin Film-Covered GaN(0001) Surfaces

Grodzicki

2020

2nd Coatings and Interfaces Web Conference (CIWC-2 2020)

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

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“…Fig. S3F showed spin-orbit split levels Mn 2p 3/2 (at around 641.2 eV and 645.6 eV) and Mn 2p 1/2 (at around 653.4 eV) [5]. In the Bi 4f spectrum (Fig.…”

Section: Table S2 Comparison Of Different Detection Methods For Oflmentioning

confidence: 93%

[Ru(bpy)3]2+@Ce-UiO-66/Mn:Bi2S3 Heterojunction and Its Exceptional Photoelectrochemical Aptasensing Properties for Ofloxacin Detection

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Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

Cited by 18 publications

References 25 publications

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Properties of Thin Film-Covered GaN(0001) Surfaces

[Ru(bpy)3]2+@Ce-UiO-66/Mn:Bi2S3 Heterojunction and Its Exceptional Photoelectrochemical Aptasensing Properties for Ofloxacin Detection

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