Effects of Mn Ions on the Piezoelectric Property of (Pb, La)(Zr, Ti)O<sub>3</sub>

Izaki, Toru; Haneda, Hajime; Watanabe, Akio; Uchida, Yoshishige; Tanaka, Junzo; Shirasaki, Shin‐ichi

doi:10.1143/jjap.31.3045

Cited by 36 publications

(20 citation statements)

References 2 publications

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“…It is reported that the valence of manganese ions is partially reduced to Mn 2þ during sintering, and the oxygen vacancy is produced by the compensation effect. 11,12) However, the valence state and the distribution of manganese ions are not determined from the X-ray photoelectron spectra or the energy dispersive X-ray analysis due to the energy limitation of the equipment and to the characteristic excitation peaks of manganese being masked by those of iron. It is considered that these complex defects are dispersed in the grains, not condensed in the grain boundaries, since a complete solid solution is formed in the Mn-doped PFN ceramics when the doping concentration is below 0.75 mol%.…”

Section: Resultsmentioning

confidence: 99%

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe_1/2Nb_1/2)O₃ Ceramics

Fang

Shan

Imoto

2004

Jpn. J. Appl. Phys.

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Mn-doped Pb(Fe 1=2 Nb 1=2 )O 3 (PFN) ceramics are synthesized by the conventional solid-state reaction method via a B-site oxide mixing route. The pure perovskite phase of Mn-doped PFN is obtained up to 0.75 mol% of manganese doping. Due to manganese doping, dielectric loss of the obtained ceramics decreases continuously up to 3 mol% of manganese, although pyrochlore phase appears. The decrease of dielectric loss can be explained by the charge compensation effect caused by the substitution of Mn 4þ for Fe 3þ in the octahedral cage of the perovskite structure, which is confirmed by X-ray photoelectron spectrometry (XPS). That is, due to the substitution of Mn 4þ for Fe 3þ ions, the relative content of iron in different valence states changes, i.e., the relative content of Fe 2þ ions increases with the amount of doped manganese. Therefore, the holeconduction mechanism caused by the partial reduction of Fe 3þ to Fe 2þ in the PFN system weakens, which leads to the decrease of dielectric loss. The effect of manganese doping on the depression of mechanical vibration loss also provides some contribution to the decrease of total dielectric loss through pinning down the rotation of spontaneous polarization induced by combining Mn 2þ (reduced of doped Mn 4þ ions during sintering) with the oxygen vacancy (produced by the compensation effect) and standing near the domain boundary. The relative dielectric constant of the Mn-doped PFN ceramics also decreases continuously with the increase of manganese content, which is believed to be related to the reduction of space-charge polarization.

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Section: Resultsmentioning

confidence: 99%

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe_1/2Nb_1/2)O₃ Ceramics

Fang

Shan

Imoto

2004

Jpn. J. Appl. Phys.

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“…2(g)). Yoo et al [12] and Izaki et al [11] had also found a similar phenomenon and it was found to be attributed to the impurities that concentrated at the grain boundaries which were obstacles for the boundary moving at high temperature and the concentration of the solute segregation was one of the majors factors which suppressed the final grain size.…”

Section: Effects Of Additives On Microstructural and Structurementioning

confidence: 72%

Investigation of complex additives on the microstructure and properties of low-temperature sintered PZT using the Taguchi method

Chua

Lai

et al. 2005

Journal of Alloys and Compounds

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“…14.2 Leakage current density (J) as a function of electric field (E) applied along the a axis at 25 C for Bi 2 WO 6 -based crystals a higher s by about half orders of magnitude than BW. It has been reported that Mn occupies the B site in perovskite oxides [41,119]. The higher oxide-ion conductivity for Mn-BW is direct evidence that Mn substitution at the W 6+ site leads to an increase in V O , which is a result of the charge compensation as described below.…”

Section: Defect Control and Propertiesmentioning

confidence: 80%

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

Noguchi

Miyayama

2011

Lead-Free Piezoelectrics

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The static and dynamic behaviors of ferroelectric domains are the underlying basis of various functional properties of ferroelectric materials, such as dielectricity, piezoelectricity, ferroelectricity, and electro-optic and acoustic-optic effects. Since the performance of ferroelectric devices is governed by these behaviors, various techniques for enhancing device performance have been widely investigated with the aim of controlling ferroelectric domains [19,20,88,109]. Such control, however, is often prevented not only by a large leakage current but also by undesirable behaviors such as domain clamping [16,73,95], fatigue [17,98], aging [63,68], imprinting [110], and depoling [98]. Ferroelectric devices thus suffer from degraded polarization and poor reliability due to insufficient control over ferroelectric domains. It is considered that the poor polarization properties, fatigue, and aging, etc. are governed by the interaction between defects and ferroelectric domains.Bismuth layer-structured ferroelectrics (BLSFs) have attracted much attention because of their high Curie temperature (T C ) and larger spontaneous polarization (P s ). The relation between crystal structure and ferroelectric properties of BLSFs has been widely investigated because of their anisotropy of ferroelectric polarization [10,22,113]. In the crystal structure of BLSFs, perovskite layers (A mÀ1 B m O 3m+1 ) are sandwiched between Bi 2 O 2 layers, where m is the number of BO 6 octahedral layers with A-site cations in the perovskite layers, as shown in Fig. 14

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Effects of Mn Ions on the Piezoelectric Property of (Pb, La)(Zr, Ti)O₃

Cited by 36 publications

References 2 publications

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe_1/2Nb_1/2)O₃ Ceramics

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe_1/2Nb_1/2)O₃ Ceramics

Investigation of complex additives on the microstructure and properties of low-temperature sintered PZT using the Taguchi method

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

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Effects of Mn Ions on the Piezoelectric Property of (Pb, La)(Zr, Ti)O3

Cited by 36 publications

References 2 publications

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe1/2Nb1/2)O3 Ceramics

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe1/2Nb1/2)O3 Ceramics

Investigation of complex additives on the microstructure and properties of low-temperature sintered PZT using the Taguchi method

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

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Product

Resources

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Effects of Mn Ions on the Piezoelectric Property of (Pb, La)(Zr, Ti)O₃

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe_1/2Nb_1/2)O₃ Ceramics

Charge Compensation Mechanism Decreases Dielectric Loss in Manganese-Doped Pb(Fe_1/2Nb_1/2)O₃ Ceramics