Effects of molecular versus atomic oxygen on NiSi and Ni(Pt)Si films grown on both p- and n-doped Si(100)

Manandhar, Sudha; Kelber, Jeffry A.

doi:10.1063/1.2909574

Cited by 6 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The source was operated at a total O 2 pressure of 5 ϫ 10 −6 Torr resulting in ϳ45% dissociation efficiency. 8,9 Exposures uncorrected for ion gauge sensitivity or flux to the sample are reported in terms of Langmuir ͑L͒; 1 L =10 −6 Torr s. XPS spectra were acquired with unmonochromatized Mg K␣ radiation and a hemispherical analyzer at constant ͑22 eV͒ pass energy. XPS data acquisition and analysis were in accord with established methods.…”

mentioning

confidence: 99%

Fundamental mechanisms of oxygen plasma-induced damage of ultralow-k organosilicate materials: The role of thermal P3 atomic oxygen

Chaudhari

Behera

et al. 2009

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and ab initio density functional theory-based molecular dynamics simulations demonstrate fundamental mechanisms for CH3 abstraction from organosilicate films by thermal O(P3). Ex situ FTIR analysis demonstrates that film exposure to thermal O(P3) yields chemical changes similar to O2 plasma exposure. In situ XPS indicates that exposure to thermal O(P3) yields O/OH incorporation in the organosilicate film concurrent with carbon loss from the surface region. These results are consistent with simulations indicating specific low kinetic barrier (<0.1 eV) reactions resulting in concurrent Si–C bond scission and Si–O bond formation.

show abstract

mentioning

confidence: 99%

Fundamental mechanisms of oxygen plasma-induced damage of ultralow-k organosilicate materials: The role of thermal P3 atomic oxygen

Chaudhari

Behera

et al. 2009

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Free radical reactions at the Ru(0001) surface: Atomic oxygen and dissociated NH3

2009

View full text Add to dashboard Cite

A plasmaless, photochemical etch process for porous organosilicate glass films

Ryan

Molis

2017

Journal of Applied Physics

View full text Add to dashboard Cite

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

show abstract

Effects of molecular versus atomic oxygen on NiSi and Ni(Pt)Si films grown on both p- and n-doped Si(100)

Cited by 6 publications

References 13 publications

Fundamental mechanisms of oxygen plasma-induced damage of ultralow-k organosilicate materials: The role of thermal P3 atomic oxygen

Fundamental mechanisms of oxygen plasma-induced damage of ultralow-k organosilicate materials: The role of thermal P3 atomic oxygen

Free radical reactions at the Ru(0001) surface: Atomic oxygen and dissociated NH3

A plasmaless, photochemical etch process for porous organosilicate glass films

Contact Info

Product

Resources

About