Effects of MOS Metallization Geometry and Processing on Mobile Impurities

Learn, Arthur J.

doi:10.1149/1.2134409

Cited by 16 publications

(6 citation statements)

References 9 publications

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“…The high Qm values of the d-c magnetron films were considerably reduced to levels comparable to the rf diode films after h e a t -t r e a t m e n t at 1000~ in cases where film degradation did not occur. This reduction in Qm with heattreatment was reported by Learn (12).…”

Section: Comparison Of the Electrical Properties O] The D-csupporting

confidence: 80%

Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

Nowicki

Moulder

1981

J. Electrochem. Soc.

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We report a preliminary study in w~.ch the physical and electrical properties of d-c magnetron and co-deposited rf diode molybdenum silicide films of varying stoichiometry are compared. It is shown that the d-c magnetron films deposited from a composite target tend to be non-optimal in comparison to the rf diode co-deposited films of the same stoichiometry. Extensive degradation of the d-c magnetron films was frequently observed during heattreatment at 1000~ in nitrogen or argon ambient. The rf diode films, however, appear to withstand heat-treatment without signs of degradation. There appear to be significant differences in film stress changes during heat-treatment, i.e., the d-c magnetron films exhibit a severe change in stress level resulting in a highly tensile state which causes film cracking and loss of adhesion, whereas the rf diode co-deposited film stress changes to minimal values during heat-treatment. Additional data on crystal morphology, resistivity change during heat-treatment, and general fihn properties are also discussed.Refractory metal silicides have been proposed as alternatives to polycrystalline silicon ("polysilicon") for gate electrode or interconnection metallizations in field effect transistor devices of VLSI dimensions (1-4). This trend has evolved as a consequence of the prohibitive values of resistance encountered in conventional polysilicon gate technology as device geometries are reduced.One significant problem with these newer materials appears to be the relatively high levels of contaminants (e.g., oxides, carbon, and alkalies) presently found in composite, hot-pressed sputtering sources (targets). These contaminants not only can alter device characteristics irreversibly, but also may result in the loss of film integrity during subsequent high temperature (1000~ device processing steps.Another potential problem with refractory silicide thin films may be the high levels of intrinsic film stress often found in these films. Additionally, many commercial sputter deposition systems do not provide a means of controlling this film stress through controlled d-c or rf substrate bias (5, 6). Films deposited with high levels of intrinsic stress can also fail in subsequent high temperature processing, where thermal expansion coefficient mismatch between film and substrate is exaggerated.In this preliminary study, we describe a co-deposition technique in which rf sputtering is done from separate high purity targets of the refractory metal and silicon with and without substrate bias. Additionally, we compare the physical and electrical properties of molybdenum silicide films prepared by this technique with films deposited from a composite target by the d-c magnetron technique.Experimental D-C magnetron deposition of molybdenum silicide.--All d-c magnetron depositions were done in a PerkinElmer Model 4400 cryo-pumped sputtering system equipped with a hot-pressed source (target) of molybdenum disilicide of 99.9 purity (Metron). The target was solder-bonded to a standard water-cooled copper backin...

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Section: Comparison Of the Electrical Properties O] The D-csupporting

confidence: 80%

Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

Nowicki

Moulder

1981

J. Electrochem. Soc.

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“…As even minor traces of metallic impurities in solutions used for treatment of semiconductors may change their surface properties markedly (Milenin et a1 1977) the presence of metallic contacts (necessary for field-effect and C(V) studies) as a source of possible contamination may lead to uncertainties when working with aggressive solutions. Even an ordinary gate metallisation process may change the properties of an MI system markedly (Learn 1975). As stressed by Heilig (1971Heilig ( , 1974 the photovoltage method may be used without any contact preparations and makes it possible to avoid such difficulties.…”

Section: Photovoltage Method: Remarks Concerning Advantages and Assum...mentioning

confidence: 99%

Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H₂O using large-signal photovoltage pulses

Heilig¹,

Flietner²,

Reineke³

1979

J. Phys. D: Appl. Phys.

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It is shown that the field-modulated large-signal photovoltage offers definite methodological advantages in comparison to other methods more frequently used for the determination of surface state distribution. Apparatus and sample preparations are described. The distribution of fast states in the forbidden gap at real silicon surfaces was studied after treatment in HF and rinsing in H2O up to times in excess of 100 h. Whilst for short rinsing times minimum concentrations of 3*1012 states cm-2 eV-1 were found, prolonged rinsing led to an 'intrinsic' distribution where the concentration in the minimum was lower by a factor of ten. The results are compared with those recently obtained at thermally oxidised silicon. A meaningful separation of surface states into three groups of different physical origin is possible both for real and for oxidised silicon surfaces. Fluoridation as a probable cause of extrinsic surface states, model descriptions of intrinsic states and, finally, certain aspects concerning semiconductor device technology are discussed.

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“…Manuscript received April 15, 1988. This was Paper 512 presented at the Honolulu, HI, Meeting of the Society, Oct. [18][19][20][21][22][23]1987.…”

Section: Intel Corporation Assisted In Meeting the Publication Costs ...mentioning

confidence: 99%

Selective Electroless Metal Deposition for Integrated Circuit Fabrication

Ting

Paunović

1989

J. Electrochem. Soc.

102

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Selective electroless metal deposition process was studied for its applications in integrated circuit fabrication. Compared to selective metal deposition by CVD process, such as the selective tungsten deposition process, the selective electroless deposition process is more attractive due to its simplicity as well as process flexibility. A variety of material such as Ni, Co, Pd, and Cu were studied for contact filling, via filling, and for conductor patterns. These materials were selectively deposited on a variety of surfaces such as silicon, silicide, A1-Si, through patterned CVD silicon dioxide, CVD silicon oxynitride, and photoresist. Although this process is still in its early stage of development, very promising results have already been achieved. The experimental conditions and results for selectively filled contact holes, via holes, and conductor patterns are described using actual examples.

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Effects of MOS Metallization Geometry and Processing on Mobile Impurities

Cited by 16 publications

References 9 publications

Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H₂O using large-signal photovoltage pulses

Selective Electroless Metal Deposition for Integrated Circuit Fabrication

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Effects of MOS Metallization Geometry and Processing on Mobile Impurities

Cited by 16 publications

References 9 publications

Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐Deposition

Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulses

Selective Electroless Metal Deposition for Integrated Circuit Fabrication

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Product

Resources

About

Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H₂O using large-signal photovoltage pulses