Effects of Nb Doping on Crystalline Orientation, Microstructure and Electrical Properties of Non-Stoichiometric PZT Thick Films via Hybrid Sol-Gel Method

Lee, Yi–Chia; Tsai, Cheng Che; Liou, Yu Cheng; Hong, Cheng Shong; Chu, Sheng Yuan

doi:10.1149/2162-8777/ac0a40

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…High performance PZT films were obtained on fluorine-doped tin oxide (FTO)-coated aluminum borosilicate glass (AG) surfaces using a modified sol-gel method (Lee et al, 2021). Liu made Pb .…”

Section: Pzt Piezoelectric Filmsmentioning

confidence: 99%

Recent progress in piezoelectric thin films as self-powered devices: material and application

Song,

Hou,

Jiang

2024

Front. Mater.

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Piezoelectric materials have become a key component in sensors and actuators in many industrial fields, such as energy harvesting devices, self-powered structures, biomedical devices, nondestructive testing, owing to the novel properties including high piezoelectric coefficient and electromechanical coupling factors. Piezoelectric thin films integrated on silicon substrates are widely investigated for their high performance and low manufacturing costs to meet the requirement of sensor networks in internet of things (IoT). The aim of this work is to clarify the application and design structure of various piezoelectric thin films types, synthesis methods, and device processes. Based on latest literature, the process of fabricating thin film sensors is outlined, followed by a concise overview of techniques used in microelectromechanical systems (MEMS) processing that can integrate more complex functions to obtain relevant information in surrounding environment. Additionally, by addressing piezoelectric thin films sensors as a cutting-edge technology with the ability to produce self-powered electronic devices, this work delivers incisive conclusions on all aspects of piezoelectric sensor related features. A greater understanding of piezoelectricity is necessary regarding the future development and industry challenges.

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Section: Pzt Piezoelectric Filmsmentioning

confidence: 99%

Recent progress in piezoelectric thin films as self-powered devices: material and application

Song,

Hou,

Jiang

2024

Front. Mater.

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Resistive properties of CuInS2 quantum dots regulated by niobium-doped lead zirconate titanate ferroelectric films

Zhu¹,

Shao²,

Zhou³

et al. 2022

Acta Phys. Sin.

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As a new type of non-volatile memory, quantum dots resistive random access memory (RRAM) has attracted much attention for its simplicity of preparation, fast responding time, high storage density, and smaller device size. CuInS2 quantum dots (CuInS2 QDs) are a kind of excellent resistive functional material with abundant electron capture sites, high optical absorption coefficient, and high carrier mobility. In this paper, CuInS2 QDs/PNZT films were prepared by spin-coating CuInS2 QDs on PNZT films. The results show that the resistive properties of CuInS2 QDs RRAMs can be effectively improved by introducing PNZT films and can be controlled by altering the polarization direction. The CuInS2 QDs/PNZT film in the negative polarization state promotes the interfacial electrons flowing to the PNZT film, which will reduce the height of the interfacial barrier and the thickness of the interfacial depletion region. And it will reduce the resistance of the composite film at the LRS. Compared to the switching voltage and resistive switching ratio of the pure CuInS2 QDs film (103), the switching voltage of the device is reduced to -4.1/3.4 V and the resistive switching ratio is increased to 106. Furthermore, it maintains good stability in the 103 cycle durability test. In contrast, the CuInS2 QDs/PNZT film interface has a larger barrier height and depletion-layer thickness when the PNZT is in the positive polarization state, which increases the resistance of the composite film in the LRS state. As a result, the switching voltage of the device increases to -6.4/5.7 V with a resistive switching ratio of 104. The resistive properties of the CuInS2 QDs/PNZT film can be tuned by changing the polarization direction, as the polarization direction of the PNZT changes the interfacial energy band structure and affects the conduction mechanism. This work reveals the feasibility of using ferroelectric thin films to improve the resistive properties of quantum dots RRAMs and providing further opportunities for the development of RRAMs.

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Effects of Nb Doping on Crystalline Orientation, Microstructure and Electrical Properties of Non-Stoichiometric PZT Thick Films via Hybrid Sol-Gel Method

Cited by 2 publications

References 18 publications

Recent progress in piezoelectric thin films as self-powered devices: material and application

Recent progress in piezoelectric thin films as self-powered devices: material and application

Resistive properties of CuInS<sub>2</sub> quantum dots regulated by niobium-doped lead zirconate titanate ferroelectric films

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