Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors

Song, Yu; Kim, M.E.; Oki, A.K.; Hafizi, M.; Murlin, W.D.; Camou, J.B.; Kobayashi, K.W.

doi:10.1109/23.45418

Cited by 28 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since this component of the current is more dominant in the larger P/A devices, the overall gain degradation is smaller. A similar behavior has been observed for the neutron irradiation effects in AlGaAdGaAs HBTs [3] and for the electron irradiation effects in AlGaAslGaAs HBTs 1191.…”

Section: E P/a Ratio Dependence Of Gain Degradationsupporting

confidence: 79%

“…A thick film of Ti/Au (120&2000A) was then deposited by thermal evaporation and patterned in a singlc lift-off step to form the emitter, base, and collector contacts and the probing pads. Devices with different emitter sizes with areas ranging from -150 pmZ to -2600 pm2 and perimeterlarea (P/A) ratios raueine from 0.08 urn-' to 0.4 urn-' were contact layer (2) graded layer (3) setback layer (5) emitter (4) base ( Table 1.…”

Section: Experimental Details I Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electron irradiation effects in polyimide passivated InP/InGaAs single heterojunction bipolar transistors

Shatalov

Subramanian

Chandrasekhar³

et al. 1999

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

attention in the recent years because of their use in the high In this paper, we report the effects of high-energy electron irradiation on the DC characteristics of polyimide passivated InPnnGaAs single heterojunction bipolar transistors. In contrast with the results of electron irradiation of unpassivated devices, the polyimide-passivated devices show much less degradation of current gain and no change in the collector output conductance. The decrease of collector current in the active regime is found to be typically -9 percent for a cumulative equivalent I-MeV dose of 2 . 7~1 0 '~ e/cm2 (-620 Mrad (InGaAs)). For low base currents, the devices show an .i -performance lightweight electronic systems in military and commercial space satellites [2-61. We have reported results on electron irradiation effects in unpassivated InPAnGaAs single heterojnnction bipolar transistors (SHBTs) and double heterojunction bipolar transistors (DHBTs) in our earlier studies [5,6]. Our results showed a significant degradation of the transistor performance for irradiation doses greater than 1x10" e/cm2. The degradation effects include a decrease of current gain, an increase in the output conductance and an increase of V C~,~.~, the collector -emitter volvage at which the transistor comes out of saturation. In this oaner, we investigate I I increase in the cnrrent gain for smaller doses (<2.5X1O8' e/Cm') the electron irradiation effects in polyimide passivated followed by a decrease at the higher doses. The increase in the InPAnGaAs SHBTs. Our present studies show that the electron current gain at low doses is attributed to the trapped charge in irradiation induced degradation of polyinlide passivated the polyimide layer near the periphery Of the B-E Junction. The devices is much less than that of the unpassivated devices. Our most significant effect of electron irradiation on the passivated show that the electron energy loss in the polyimide devices is a decrease in the slope of the IC-Vc~ characteristics layer is very low and hence the polyimide layer does not of some devices in the saturation regime. We believe this provide much shield'. we believe that the increased decrease in slope is caused by an increase in the collector series radiation tolerance of the po~yimide-passivated devices is due resistance after irradiation. Finally, devices with smaller to the smaller radiation damage at the peripheries of the baseemitter size are shown to have less radiation degradation than emitter and base-collector junctions as to the the larger emitter devices. This is explained by the smaller unpassivated junctions, radiation damage at the junction peripheries of the passivated devices. EXPERIMENTAL DETAILS

show abstract

Section: E P/a Ratio Dependence Of Gain Degradationsupporting

confidence: 79%

Section: Experimental Details I Introductionmentioning

confidence: 99%

Electron irradiation effects in polyimide passivated InP/InGaAs single heterojunction bipolar transistors

Shatalov

Subramanian

Chandrasekhar³

et al. 1999

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…14 For example, the collector current in minority carrier HBTs is about ten times more sensitive to radiation-induced displacements than is the drain current in majority carrier HEMTs. [4][5][6][7] In a conventional electronic device, carrier transport occurs by the diffusion of thermally-equilibrated carriers from source to drain. However, when device size falls below the carrier mean free path, or when dimensionality is constrained or quantum mechanical transport mechanisms are employed, the physics of device operation is altered.…”

Section: Iii-v Materials and Devicesmentioning

confidence: 99%

“…4,5 ' 29 " 31 A number of simple HBT-based ICs have also been tested, including divide-by-two circuits. 5 Neutron irradiation effects on the common-emitter characteristics of an InP/InGaAs HBT are shown in Fig. 2.…”

Section: 11conventional Electronic Devicesmentioning

confidence: 99%

Radiation Effects in Iii-v Semiconductor Electronics

Weaver

McMorrow

Cohn³

2003

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

show abstract

“…[4][5][6][7][8] Higher energy bandgap ͑E g ͒ semiconductor devices are better for radiation hard. AlGaN / GaN high electron mobility transistors ͑GaN E g = 3.4 eV͒ irradiated with 17 MeV protons to a fluence of 7 ϫ 10 13 protons/ cm 2 barely exhibited any degradation.…”

Section: Introductionmentioning

confidence: 99%

Proton irradiation effects on Sb-based heterojunction bipolar transistors

Kim

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

In 0.52 Al 0.48 As ∕ In 0.39 Ga 0.61 As 0.77 Sb 0.23 ∕ In 0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5MeV protons at fluences from 2×1011to2×1015protons∕cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2×1011cm−2, which was equivalent to around 40years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs∕InGaAsSb∕InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

show abstract

Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors

Cited by 28 publications

References 8 publications

Electron irradiation effects in polyimide passivated InP/InGaAs single heterojunction bipolar transistors

Electron irradiation effects in polyimide passivated InP/InGaAs single heterojunction bipolar transistors

Radiation Effects in Iii-v Semiconductor Electronics

Proton irradiation effects on Sb-based heterojunction bipolar transistors

Contact Info

Product

Resources

About