Effects of nitrogen implantation in silicon for shallow p+-n junction formation

Abstract

This letter will present the effects of nitrogen implantation on shallow p+-n junction formation in silicon. The p+-n junctions fabricated at different implantation conditions and heat budgets were characterized by secondary ion mass spectroscopy, current–voltage and capacitance–voltage measurements, and analyzed by transport of ions in matter simulation. The capacitance–voltage measurements of nitrogen implanted samples revealed the one-sided abrupt junction properties, and the current–voltage measurements indicated the shallow junction characteristics due to boron diffusion suppression by nitrogen. The activation energy is about 0.39 eV for temperatures below 80 °C, and its dominant leakage mechanism is phonon-assisted tunneling. At a reverse bias of −3 V, the leakage current density was 5.217×10−8 A/cm2 at −3 V, which is comparable to that of a conventional p+-n junction.

Process Optimization of p+LDD in 130nm Process Technology using TCAD Simulation

“…When the PLDD is doped with BF2, the lateral diffusion is increased with the increase of energy although there is no change in junction depth. This proved that BF2 dopant is useful for the shallow junction device [8]. Comparing our simulation results with the experimental data, there is a reasonable match, from Table 2 and Table 3.…”

Characteristics of n+–p junction leakage induced by tantalum pentoxide gate insulator and gate reoxidation

“…3 plots J leak /T 2 vs E 1/2 to see the dependence of the reverse current on the electric field calculated from the maximum electric field at the junction. The slopes S J of ST1, ST2, and MT2 in the low-voltage regime agree quite well with the theoretical value for Schottky barrier lowering 8,9 S j ϭ q 2kT ͱ q Ϸ0.0044 ͑ V/cm͒ Ϫ1/2 at 25°C.…”

“…6,7 In high temperature regions, thermally generated carriers are contributed to diffusion current and their activation energies are close to E g . 8 At temperature lower than 80°C, the activation energies of the ST1, ST2, and MT1 are about 0.37 eV. These mean that there exists not only the generation-recombination current, but also a leakage current due to another enhancement mechanism.…”