Effects of nonradiative recombination on the temperature characteristics of threshold current density in 670 nm GaInAsP-AlGaAs visible lasers

Leakage current analysis for InyGa1−yPzAs1−z/AlxGa1−xAs double heterostructure lasers

“…5,6 They also investigated the dependence of J th and T 0 on the doping concentration in the P-type Al x Ga 1Ϫx As cladding layer and found that increasing the hole concentration from 4ϫ10 17 to 1.5ϫ10 18 cm Ϫ3 also resulted in a reduction of J th . Later they developed a carrier leakage model to explain these phenomena.…”

“…Later they developed a carrier leakage model to explain these phenomena. 6 The increase of J th with decreasing x was ex- plained in terms of electrons overflowing the heterobarriers because they thought that the electron leakage component is 10 times larger than the hole leakage component because of its large mobility, similar to the case of GaAs/Al x Ga 1Ϫx As DH lasers. Thus electron overflowing of the heterobarrier was considered the main nonradiative process in these lasers and as responsible for the high threshold.…”

“…1 could be applied. 5,6 We will see later that this assumption is not acceptable. In this article, we suggest an improved band offset diagram for the In y Ga 1Ϫy P z As 1Ϫz /Al x Ga 1Ϫx As heterojunction that is based on the transitivity rule and on more accurate data for the In 0.5 Ga 0.5 P/GaAs band offset as determined by our newly developed method.…”