Effects of notch shape on the magnetic domain wall motion in nanowires with in-plane or perpendicular magnetic anisotropy

Noh, Su Jung; Miyamoto, Yoshinari; Okuda, Masahiro; Hayashi, Naoto; Kim, Young Keun

doi:10.1063/1.3677340

Cited by 31 publications

(12 citation statements)

References 22 publications

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“…The algorithm steps as illustrated in Figure 6 with the parameters required for simulating the domain-wall oscillation in the constricted nanowire in MUMAX 3.9.1c (CUDA 9020 GeForce GTX 1050) allow us to obtain the result shown in Figure 7 where we can see that the domain wall is bound to the constricted region of the nanowire. 12 The domain wall was blocked at the constricted region of d = 15 nm and with the spin polarization of the applied current; with the damping constant, the polarized electric current flows along the positive x-direction. At low current densities, an extrinsic binding regime appears and after a few damped oscillations, the domain wall becomes stable.…”

Section: Resultsmentioning

confidence: 99%

“…It is noteworthy that the size of the cleft has to be relatively smaller than the thickness of the nanowire. 8 Figure 1a depicts a conventional nanowire, in which the magnetization is directed in the horizontal x-direction and the current polarized with the spin flows along the length of the nanowire in the horizontal x-direction. In Figure 1b between multiple regions one step is formed.…”

Section: Introductionmentioning

confidence: 99%

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Stabilized domain-wall pinning in a constricted nanowire

Prashanth¹,

Ahmed²

2020

Mater. Tehnol.

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The typical characteristics of spin that relate to logical applications and memory are part of domain walls, where they are utilized as information carriers. Magnetic skyrmions also fall under the above category and their unique topology enables them to exhibit distinct characteristics of a dynamic nature in comparison with domain walls. A novel method of accurately binding a domain wall with a magnetic nanowire is proposed. The domain wall is stapled, at the desired position, to the proposed stepped nanowire, forming a new structure with a simple offset of two single nanowires. The domain wall can be precisely stabilized by creating a stepped nanowire. The parameters of the nanowire such as the size of the step, the properties of the materials and the dimensions are strongly dependent on the critical current regarding the depinning of the domain wall. A low depinning current is required for a wide nanowire. We address the current-induced domain wall in a compressed nanowire computationally via a computer algorithm and simulate the pinning of the domain wall in the compressed region via a graphic-processing-unit (GPU) accelerated micromagnetic simulation framework. Further, in the paper, we investigate the design of the device physics, multiple-bit per single cell memory, utilized in high-performance computing and vision systems.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stabilized domain-wall pinning in a constricted nanowire

Prashanth¹,

Ahmed²

2020

Mater. Tehnol.

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“…In this paper we present a micromagnetic simulation study of current-driven domain wall behaviors in thin film-patterned planar magnetic nanowires, which demonstrates a new mechanism for substantial reduction and effective tuning of the critical current for depinning domain walls in magnetic circuit. It is worth noting that micromagnetic simulation has been widely used to understand various factors that affect the critical current for domain wall depinning in magnetic nanowires, including edge roughness [8,9], thermal perturbation [10], magnetic anisotropy [11,12] and saturation magnetization [13], applied magnetic field [14], and notch shape [15]. The new mechanism revealed in this work is based on domain wall pile-up, in analogy to the well-known dislocation pile-up mechanism responsible for the Hall-Petch effect in mechanical strength.…”

Section: Introductionmentioning

confidence: 99%

Altering critical depinning current via domain wall pile-up in magnetic nanowires

Jin

2015

Journal of Magnetism and Magnetic Materials

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An important role of domain wall pileup in current-driven domain wall depinning in magnetic nanowires is revealed using micromagnetic simulations. It is found that the critical current for domain wall depinning can be substantially reduced and conveniently tuned by controlling domain wall number in the pileup at pinning site, in analogy to dislocation pileup responsible for Hall-Petch effect in mechanical strength. Domain wall pinning and depinning at an s-shape bend is considered, and the effects of curvature and current crowding in magnetic circuit on domain wall behaviors are discussed.

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“…41,42 To overcome this pinning, the magnetic field must be increased, leading to the DW propagation. More importantly, the role of the periodic triangular features for controlling the DW micromagnetic structure and hence the DW stability is also linked with reversal field strength.…”

mentioning

confidence: 99%

Controlling the stability of both the structure and velocity of domain walls in magnetic nanowires

Brandão

Atkinson

2016

Applied Physics Letters

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Citation for published item:fr nd£ oD tF nd etkinsonD hF @PHITA 9gontrolling the st ility of oth the stru ture nd velo ity of dom in w lls in m gneti n nowiresF9D epplied physi s lettersFD IHW @TAF HTPRHSF Further information on publisher's website: PHIT emeri n snstitute of hysi sF his rti le m y e downlo ded for person l use onlyF eny other use requires prior permission of the uthor nd the emeri n snstitute of hysi sF he following rti le ppe red in fr nd£ oD tF etkinsonD hF @PHITAF gontrolling the st ility of oth the stru ture nd velo ity of dom in w lls in m gneti n nowiresF epplied hysi s vetters IHW@TAX HTPRHS nd m y e found t httpsXGGdoiForgGIHFIHTQGIFRWTHPHI Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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Effects of notch shape on the magnetic domain wall motion in nanowires with in-plane or perpendicular magnetic anisotropy

Cited by 31 publications

References 22 publications

Stabilized domain-wall pinning in a constricted nanowire

Stabilized domain-wall pinning in a constricted nanowire

Altering critical depinning current via domain wall pile-up in magnetic nanowires

Controlling the stability of both the structure and velocity of domain walls in magnetic nanowires

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