Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density

Remashan, K.; Bhat, K. N.

doi:10.1016/s0040-6090(98)01414-x

Cited by 18 publications

(24 citation statements)

References 16 publications

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“…[43] Most passivation strategies found in the literature employ inorganic or organic thiols, where sulfur is intended to bind covalently to the GaAs surface, but the stability of the adsorbed monolayers is often limited, in part due to their defective structure. [18,44] Our observations on self-assembled monolayers (SAMs) of ODT and MHDA are in accordance with earlier findings. [15,16,18,37] The ellipsometrically obtained thicknesses of 1.5 nm point to a tilted arrangement of the alkyl chains with respect to the surface normal, as has been previously reported.…”

Section: Discussionsupporting

confidence: 92%

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

et al. 2002

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The chemical instability of the gallium arsenide surface poses a serious limitation to its use under ambient conditions, such as in air or aqueous solution. It is shown that both bare GaAs and GaAs coated with self‐assembled monolayers of organic alkanethiols are continuously etched in aqueous environments, which limits their use as biosensor devices in physiological environments. A corrosion protection material having long‐term stability (“chemical passivation”) and biocompatibility (“biological passivation”) with the GaAs surface was found to be interfacial layers of polymerized organic mercaptosilanes a few tens of nanometers thick. The mercaptosilanes not only provided a nearly perfect corrosion protection of GaAs in water, but they also have the potential to introduce chemical groups that allow easy, further surface functionalization. Characterization of the interfacial polymer layer and its protective role was done by atomic force microscopy (AFM), ellipsometry, contact angle measurements, and atomic absorption spectroscopy (AAS). The interfacial polymer layers fully suppressed the release of arsenic into the electrolyte buffer and also provided an adhesion‐promoting interface, which allowed the cultivation of electrically excitable cells, normal rat kidney (NRK) fibroblasts, on GaAs. The electrical performance of GaAs and GaAs/InGaAs heterostructures in water was monitored via cyclic voltammetry and the IU characteristics of field‐effect channels. GaAs was significantly stabilized by the insulating polymeric surface coatings, even under moderate electrochemical loads. These findings are promising for, e.g., the implementation of GaAs technology in future cell–semiconductor hybrids.

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Section: Discussionsupporting

confidence: 92%

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

et al. 2002

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“…The inherent ability of adsorbed monolayers to modify the physical and chemical properties of solid surfaces makes them attractive for the effective control of III-V semiconductors. [13][14][15][16][17][18][19] Hence, it has become increasingly imperative to accurately determine the stability of SAMs prepared a͒ Electronic mail: lapierr@mcmaster.ca by various methods, as well as to develop a better understanding of the reasons underlying the discrepancy in the reliability of the ensuing passivation. 10 Consequently, this novel passivation mechanism has demonstrated its relevance as a prospective means of preventing further chemical modification while at the same time maintaining the desired electronic properties of the underlying surface, especially in the case of nanoscale device structures for which there is a large surface-to-volume ratio.…”

Section: Introductionmentioning

confidence: 99%

Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases

Budz

Biesinger

LaPierre

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs J. Appl. Phys. 99, 054701 (2006); 10.1063/1.2178659Passivation of InP surfaces of electronic devices by organothiolated self-assembled monolayers Self-assembled monolayers ͑SAMs͒ of octadecanethiol ͑ODT͒, CH 3 ͑CH 2 ͒ 17 SH, were deposited on GaAs ͑100͒ substrates from liquid and vapor phases. Liquid-phase-deposited SAMs were prepared by immersing the substrate in a dilute solution of ODT and ethanol, while vapor-phase-deposited monolayers were prepared by exposing the GaAs surface to a stream of ODT vapor in an ultrahigh vacuum environment. The structural and optical properties of the resulting SAMs were examined with contact angle ͑CA͒ analysis, photoluminescence ͑PL͒ spectroscopy, high-resolution x-ray photoelectron spectroscopy ͑HRXPS͒, and spectroscopic ellipsometry. Although well-ordered films were formed from both deposition techniques, PL, CA analysis, and ellipsometry measurements revealed that the overall quality, structure, and long-term durability of the resulting SAMs depended on the preparation method. Specifically, time-dependent PL and CA analysis indicated an enhanced stability for vapor-deposited films stored under ambient conditions. Through HRXPS measurements, the attachment of the thiolate molecules to the GaAs substrates was shown to proceed through the formation of chemical bonds at both Ga and As surface sites, with the percentage of each bonding configuration dictated by the surface termination produced via the cleaning process used prior to the SAM deposition. Collectively, the results suggested that more robust monolayers exhibiting greater surface coverage, and therefore increased passivation and stability characteristics, are assembled from vapor phase.

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“…Through these investigations, a common thread has been the use of sulfur, in the form of a sulfuric acid etching followed by treatment in solution with sodium sulfide, 1-4 ammonium sulfide, 3-8 organic alkanethiols, [9][10][11][12][13] or through electrochemical deposition. In most cases these studies were concerned with the stabilization of the surface for the modification of the Schottky barrier and improved performance of semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopy study of self-assembled monolayers of alkanethiols on (001) GaAs

Wieliczka¹,

Ding²,

Dubowski³

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inFormation dynamics of hexadecanethiol self-assembled monolayers on (001) GaAs observed with photoluminescence and Fourier transform infrared spectroscopies Observation of surface enhanced IR absorption coefficient in alkanethiol based self-assembled monolayers on GaAs (001) Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs J. Appl. Phys. 99, 054701 (2006); 10.1063/1.2178659Novel cyanoterphenyl self-assembly monolayers on Au(111) studied by ellipsometry, x-ray photoelectron spectroscopy, and vibrational spectroscopies Self-assembled monolayers of several alkanethiol molecules, with varying chain length and terminal groups, were investigated using x-ray photoelectron spectroscopy ͑XPS͒. The chain lengths varied from 10 to 15 methylene units, and the terminal group was either hydrophilic carboxylic acid and hydroxyl or hydrophobic methyl. The alkanethiol molecules were deposited on GaAs surfaces from liquid solutions. The impact of atmospheric exposure was examined by investigating one set of samples stored under atmospheric conditions and a second set that was stored in a nitrogen atmosphere prior to analysis. Carbon, oxygen, gallium, and arsenic core level XPS spectra were obtained on all surfaces. The intensity of the gallium and arsenic core levels indicates a considerable difference in the Ga/ As ratio dependent on the terminal group of the alkanethiol. Additionally, the carbon and oxygen spectra indicate varying chemical bonding on the surface with the alkanethiol's having a carboxylic acid terminal group showing a more complex carbon and oxygen bonding.

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Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density

Cited by 18 publications

References 16 publications

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases

X-ray photoelectron spectroscopy study of self-assembled monolayers of alkanethiols on (001) GaAs

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