Effects of oxygen concentration variation on the structural and optical properties of reactive sputtered WOx thin film

The impact of side chain elongation from the Y6 to Y6-12 acceptor in organic solar cells: a fundamental study from molecules to devices

“…, where d represents the film thickness (cm) and T represents the transmittance. 60 Doing so, the absorption coefficient in neat films was estimated to be 2.81 Â 10 5 cm À1 and 2.92 Â 10 5 cm À1 for Y6 and Y6-12, respectively. 42 Such high absorption coefficients and the broad absorption band of both NFAs in the 600-900 nm range are highly beneficial for effective solar photon absorption, which should translate into high photocurrent in OSCs.…”

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO3–xBased MIM Device

“…The estimated value ≈2.3 agrees well with the dielectric constant reported for non‐stoichiometric WO 3–x thin films. [ 49 ] Analysis of dc conduction behavior suggests that the set operation gives rise to metallic filament formation and current conduction takes place preferentially through the localized conductive filaments when the device is in the ON state. During the reset operation, the conducting filaments get ruptured and conduction takes place uniformly over the entire device area following Schottky emission.…”

Effect of channel thickness on radiation hardness of solution-processed oxide thin film transistors

“…S8a, ESI†). 58–60 As shown in Table S1 (ESI†), decreasing the t ch of ZITO led to the widening of the energy bandgap. 61 To examine the band alignment of ZITO thin films with different t ch , the XPS valence band spectra were also measured (Fig.…”