Effects of oxygen related defects on the electrical and thermal behavior of a n+−p junction

Abstract

This study examines the electrical and temperature behavior of two of the levels in Czochralski-grown silicon that are most detected by different authors. A comparison between an analytical expression of the generation recombination noise in pϪn junctions with experimental data taken from other authors was used as a tool for determining capture cross sections and densities of oxygen related traps in silicon. The parameters found in the literature for a deep level located at E C Ϫ0.43 eV are verified in this work. Parameters for a shallower level, a Coulomb trap with an activation energy of 0.17 eV, are also obtained. To correlate our theoretical results, obtained by noise analysis, with those of other authors, obtained with different techniques, thermally activated and field enhanced transitions between the latter center and the conduction band are considered. A thorough theoretical study of a silicon pϪn junction with these levels shows a mutable electrical operation of the shallower center, acting as an electron trap at low temperatures and as a hole trap at room temperatures.

Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen‐Implanted Silicon

“…Kot et al [ 9 ] investigated the evolution of the electron states in n‐Cz‐Si samples with an increase of the annealing temperature and found an additional shallow level E c − 0.16 eV that was attributed to rod‐like defects accompanied by OPs growth process. Such an OP‐related level was also reported by Tejada et al [ 10 ]…”

(Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review

“…Thus, the pn-junction leakage current increased. Jimenez et al, demonstrated that the oxygen-related-deep-level defects such as oxygen precipitates affect the pn-junction leakage current after the device heat treatment (41). In contrast, Figure 7(b) indicates that the pn-junction leakage current of the hydrocarbon molecular-ion-implantation is lower with SAB than without SAB.…”

Localization and quantification of noise sources in four‐gate field‐effect‐transistors

“…Although its contribution to the low frequency noise is negligible, the reason to study this trap is to analyze its effect on the conducting channel of the device, one of the objectives of this work. The presence of these two bulk levels may be associated with different forms of oxygen precipitates [12][13][14].…”